UOTe:范德华晶格中的近藤相互作用拓扑反铁磁体

IF 27.4 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY Advanced Materials Pub Date : 2024-11-26 DOI:10.1002/adma.202414966
Christopher Broyles, Sougata Mardanya, Mengke Liu, Junyeong Ahn, Thao Dinh, Gadeer Alqasseri, Jalen Garner, Zackary Rehfuss, Ken Guo, Jiahui Zhu, David Martinez, Du Li, Yiqing Hao, Huibo Cao, Matt Boswell, Weiwei Xie, Jeremy G. Philbrick, Tai Kong, Li Yang, Ashvin Vishwanath, Philip Kim, Su-Yang Xu, Jennifer E. Hoffman, Jonathan D. Denlinger, Sugata Chowdhury, Sheng Ran
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引用次数: 0

摘要

自最初发现二维范德华(vdW)材料以来,人们一直致力于将磁性、带状结构拓扑和强电子相关性这三种特性结合起来,以利用新出现的量子现象并扩大其潜在应用。然而,发现一种本质上包含所有三种成分的单一 vdW 材料仍然是一项艰巨的挑战。本文报告了在 vdW 5f 电子系统 UOTe 中发现的近藤相互作用拓扑反铁磁体。它具有 150 K 的高反铁磁(AFM)转变温度,其独特的 AFM 构型打破了偶数层的奇偶性和时间反转(PT)对称性,同时保持零净磁矩。这种角度分辨光发射光谱(ARPES)测量显示了费米级附近的狄拉克带,结合理论计算证明了 UOTe 是一种 AFM 狄拉克半金属。在原子力显微镜阶内,可以观察到 Kondo 相互作用的存在,100 K 以下费米水平附近出现的 5f 平带以及 Kondo 带和狄拉克带之间的杂化就是证明。根据其双层形式的密度泛函理论计算,UOTe 是完全补偿的 AFM 切尔绝缘体的罕见实例。
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UOTe: Kondo-Interacting Topological Antiferromagnet in a Van der Waals Lattice
Since the initial discovery of 2D van der Waals (vdW) materials, significant effort has been made to incorporate the three properties of magnetism, band structure topology, and strong electron correlations—to leverage emergent quantum phenomena and expand their potential applications. However, the discovery of a single vdW material that intrinsically hosts all three ingredients has remained an outstanding challenge. Here, the discovery of a Kondo-interacting topological antiferromagnet is reported in the vdW 5f electron system UOTe. It has a high antiferromagnetic (AFM) transition temperature of 150 K, with a unique AFM configuration that breaks the combined parity and time reversal (PT) symmetry in an even number of layers while maintaining zero net magnetic moment. This angle-resolved photoemission spectroscopy (ARPES) measurements reveal Dirac bands near the Fermi level, which combined with the theoretical calculations demonstrate UOTe as an AFM Dirac semimetal. Within the AFM order, the presence of the Kondo interaction is observed, as evidenced by the emergence of a 5f flat band near the Fermi level below 100 K and hybridization between the Kondo band and the Dirac band. The density functional theory calculations in its bilayer form predict UOTe as a rare example of a fully-compensated AFM Chern insulator.
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来源期刊
Advanced Materials
Advanced Materials 工程技术-材料科学:综合
CiteScore
43.00
自引率
4.10%
发文量
2182
审稿时长
2 months
期刊介绍: Advanced Materials, one of the world's most prestigious journals and the foundation of the Advanced portfolio, is the home of choice for best-in-class materials science for more than 30 years. Following this fast-growing and interdisciplinary field, we are considering and publishing the most important discoveries on any and all materials from materials scientists, chemists, physicists, engineers as well as health and life scientists and bringing you the latest results and trends in modern materials-related research every week.
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