用于在碳化硅上生长外延石墨烯的石墨坩埚的退火、设计和长期运行

IF 1.7 4区 材料科学 Q3 CRYSTALLOGRAPHY Journal of Crystal Growth Pub Date : 2024-11-14 DOI:10.1016/j.jcrysgro.2024.127988
Mykhailo Shestopalov , Veronika Stará , Martin Rejhon , Jan Kunc
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引用次数: 0

摘要

我们介绍了用于在碳化硅上生长外延石墨烯的石墨坩埚的退火、几何形状、存储和寿命。在第一批石墨烯样品生长之前,我们对制造完成的石墨坩埚的退火过程中的残余气体含量进行了监测。一氧化碳的高温演变表明固体碳与残留水发生了反应。因此,我们提出了一个由四个退火循环组成的程序来消除这种反应。焙烧好的坩埚在空气中长期存放后,残留气体的演变表明水和一氧化碳的增加与未焙烧的坩埚相似。因此,我们建议将坩埚存放在氩气环境中。此外,我们还讨论了坩埚形状对石墨烯质量的影响。也就是说,我们将圆柱形半封闭坩埚与扁平开口坩埚进行了比较。与半封闭圆柱形坩埚中的扩散驱动型气体交换相比,开放式坩埚中的流动辅助型气体交换更有利于石墨烯的生长。流动辅助气体交换能更有效地清除排出的残留杂质,因此优于半封闭圆柱形坩埚中硅蒸汽压增加的优势。我们还对石墨坩埚的寿命进行了研究,结果表明,老化的坩埚会导致石墨烯的不均匀应变增强。
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Annealing, design and long-term operation of graphite crucibles for the growth of epitaxial graphene on SiC
We describe the annealing, geometry, storage, and lifespan of graphite crucibles for the growth of epitaxial graphene on SiC. We monitor residual gas content during the annealing of the as-manufactured graphite crucible before the growth of the first graphene samples. The high-temperature evolution of carbon monoxide points towards the reaction of solid carbon and residual water. Therefore, we propose a procedure consisting of four annealing cycles to eliminate this reaction. The residual gas evolution after long-term storage of well-baked crucibles in the air shows a similar increase in water and carbon monoxide as that in unbaked crucibles. Hence, we propose the crucible storage in argon ambient. Further, we discuss the role of the crucible shape on graphene quality. Namely, we compare the cylindrical semi-closed crucible to the flat opened crucibles. The flow-aided gas exchange in the opened crucible is more beneficial for graphene growth than the diffusion-driven gas exchange in the semi-closed cylindrical crucibles. The flow-aided gas exchange leads to more efficient removal of outgassed residual contaminants, thus outperforming the advantage of increased silicon vapor pressure in the semi-closed cylindrical crucible. We also study the graphite crucible lifespan, showing that the aged crucible leads to the enhanced inhomogeneous strain in graphene.
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来源期刊
Journal of Crystal Growth
Journal of Crystal Growth 化学-晶体学
CiteScore
3.60
自引率
11.10%
发文量
373
审稿时长
65 days
期刊介绍: The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.
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