通过光学浮区法合成 LaSrGaO4:RE3+(RE = Sm、Eu、Ho)单晶体及其光学特性

Q2 Engineering Optical Materials: X Pub Date : 2024-11-21 DOI:10.1016/j.omx.2024.100380
Hasan Yilmaz , Masahiko Isobe , Oliver Clemens , Markus Suta , Pascal Puphal
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引用次数: 0

摘要

在具有低声子能量的各种单晶宿主化合物中合成具有镧系离子发光特性的材料方面取得的进展,促进了众多材料的优化,以满足新能源勘探、发光二极管(LED)、量子点显示器、激光技术、传感器、电信、医疗诊断等不同应用所需的特定光学特性。加强分析镧系元素离子在各种宿主化合物中的发光机理,多年来一直吸引着研究人员,并最终开发出用于光学应用的创新材料。为了更深入地了解加入 Ruddlesden-Popper 型宿主化合物 (La1-xREx)SrGaO4 (RE = Sm、Eu、Ho,x = 0;0.05;0.10)中的 Sm3+、Eu3+ 和 Ho3+ 离子的发光机理,我们对通过光学浮动区 (OFZ) 方法生长的具有均匀活化剂分布的高质量单晶进行了系统研究。X 射线衍射(XRD)表征表明,该化合物在空间群为 I4/mmm(编号 139)的四方晶系中结晶,并通过背散射电子(BSE)成像显示出掺杂剂的均匀分布。在 77 K 和 298 K 两种温度下进行的光致发光研究表明,由于主化合物的低截止声子能量限制了非辐射损失途径,掺入的镧系离子会发出明亮的光,甚至会出现不寻常的转变。这些荧光粉的物理密度高达 6.4 克/立方厘米,因此可被视为具有高光产率的 X 射线成像荧光粉的理想候选材料。
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Synthesis and optical properties of LaSrGaO4:RE3+ (RE = Sm, Eu, Ho) single crystals via optical float zone method
The advancement of synthesis of materials with luminescence properties of lanthanoid ions in various single crystalline host compounds with low phonon energies has facilitated the optimization of numerous materials to meet the specific optical properties required for diverse applications such as new energy resource exploration, light-emitting diodes (LEDs), quantum dot displays, laser technology, sensors, telecommunications, medical diagnostics and more. Enhanced analyses of the luminescence mechanism of lanthanoid ions in various host compounds, which have captivated researchers for many years and culminated in the development of innovative materials for optical applications. To obtain a deeper understanding of the luminescence mechanism of Sm3+, Eu3+, and Ho3+ ions incorporated into the Ruddlesden-Popper-type host compounds (La1-xREx)SrGaO4 (RE = Sm, Eu, Ho and x = 0; 0.05; 0.10) high quality single crystals with homogenous activator distribution grown by the optical floating zone (OFZ) method were examined systematically. X-ray diffraction (XRD) characterization shows that the compound crystallizes in a tetragonal crystal system with the space group I4/mmm (no. 139) with homogenous distribution of the dopants shown via backscattered electron (BSE) imaging. Photoluminescence studies at both 77 K and 298 K reveal that the incorporated lanthanoid ions brightly emit and even show unusual transitions due to the low cutoff phonon energy of the host compound that limits non-radiative loss pathways. Together with a high physical density of ∼6.4 g/cm3, these phosphors could be conceptualized as interesting candidates for X-ray imaging phosphors aiming at high light yields.
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来源期刊
Optical Materials: X
Optical Materials: X Engineering-Electrical and Electronic Engineering
CiteScore
3.30
自引率
0.00%
发文量
73
审稿时长
91 days
期刊最新文献
The effect of temperature factor during heavy ion irradiation on structural disordering of SiC ceramics Luminescence of copper-doped α-quartz crystal after oxygen treatment Synthesis and optical properties of LaSrGaO4:RE3+ (RE = Sm, Eu, Ho) single crystals via optical float zone method Optical and EPR study of Mn4+ ions in different crystal environments in Mn, Li co-doped MgO Modulation of spectroscopic properties in the YXO4 compounds (where X = V5+, P5+, As5+) doped with Eu3+ ions
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