表面氧化对 SiO2/Ta/NiFe 多层膜中吉尔伯特阻尼和反自旋霍尔效应的影响

IF 5.3 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Materials Research Bulletin Pub Date : 2024-11-22 DOI:10.1016/j.materresbull.2024.113220

Pranita Sharma , Seunghyun Lee , Jonghyeon Choi , Jung-Woo Yoo , Krishna Begari , CheolGi Kim

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引用次数: 0

摘要

铁磁材料（FM）和重金属（HM）组成的双层体系中的自旋泵浦会产生自旋电流，这种电流可以通过反自旋霍尔效应（ISHE）检测到。在此，我们观察了 SiO2/Ta (tnm)/NiFe (10nm) 双层体系中自旋泵和 ISHE 过程中吉尔伯特阻尼 (α)的降低。SiO2/NiFe (10nm) 的 α 值被测定为 0.0121 ± 0.0003。然而，对于 SiO2/Ta（t nm）/NiFe（10 nm），在所有 Ta 厚度上都观察到了持续较低的阻尼，这可能是由于界面上的非平衡自旋积累。此外，界面自旋混合电导值高达 -1.83(±0.05) × 1019 m-2，自旋扩散长度 (λSD) 为 2.77±0.53 nm。此外，还记录了较高的反向自旋霍尔电压，并计算出 Ta 7 nm 系统的自旋霍尔角为 -0.024。

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Impact of surface oxidation on gilbert damping and inverse spin hall effect in SiO2/Ta/NiFe multilayers

Spin pumping in bilayer systems composed of ferromagnetic materials (FM) and heavy metals (HM) generates spin currents that can be detected by the inverse spin Hall effect (ISHE). Here, the reduction in Gilbert's damping (α) during spin pumping and the ISHE in the SiO₂/Ta (tnm)/NiFe (10nm) bilayer system was observed. The value of α for SiO₂/NiFe (10 nm) was determined to be 0.0121 ± 0.0003. However, for SiO₂/Ta (t nm)/NiFe (10 nm), a consistently lower damping across all Ta thicknesses was observed, which could be due to non-equilibrium spin accumulation at the interface. Additionally, high interfacial spin mixing conductance values of -1.83(±0.05) × 10¹⁹ m^-2 and a spin diffusion length (λ_SD) of 2.77±0.53 nm was obtained. Further high inverse spin Hall voltage was recorded and the spin Hall angle of -0.024 was calculated for the Ta 7 nm system.

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来源期刊

Materials Research Bulletin 工程技术-材料科学：综合

CiteScore

9.80

自引率

5.60%

发文量

372

审稿时长

42 days

期刊介绍： Materials Research Bulletin is an international journal reporting high-impact research on processing-structure-property relationships in functional materials and nanomaterials with interesting electronic, magnetic, optical, thermal, mechanical or catalytic properties. Papers purely on thermodynamics or theoretical calculations (e.g., density functional theory) do not fall within the scope of the journal unless they also demonstrate a clear link to physical properties. Topics covered include functional materials (e.g., dielectrics, pyroelectrics, piezoelectrics, ferroelectrics, relaxors, thermoelectrics, etc.); electrochemistry and solid-state ionics (e.g., photovoltaics, batteries, sensors, and fuel cells); nanomaterials, graphene, and nanocomposites; luminescence and photocatalysis; crystal-structure and defect-structure analysis; novel electronics; non-crystalline solids; flexible electronics; protein-material interactions; and polymeric ion-exchange membranes.