富半导体单壁碳纳米管网络对场效应晶体管性能的捆绑效应

IF 4.6 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Materials Science in Semiconductor Processing Pub Date : 2025-03-01 Epub Date: 2024-11-29 DOI:10.1016/j.mssp.2024.109174
Juyeon Seo , Seung Hun Park , Jianlin Li , Sanghyun Hong , Young Lae Kim , Byungjin Cho , Hak Soo Choi , Yung Joon Jung
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引用次数: 0

摘要

尽管在创建半导体富集的单壁碳纳米管(SWCNT)网络方面不断取得进展,但由于持续的金属渗透和不可控的纳米管捆绑,在实现场效应晶体管(fet)的电子均匀通道方面仍然存在重大挑战。为了解决这一关键问题,我们系统地探索了SWCNTs对基于SWCNTs网络的fet电特性的捆绑效应。具有更高束密度和更大束的器件在驱动电流、开/关比、亚阈值摆幅、跨导和热依赖性方面显示出增强的FET指标,从而在晶圆尺度上实现高度均匀和集成的swcnts FET。这些性能的增强是由于增加了传导通道,金属碳纳米管在致密、厚和局部排列的碳纳米管束中的屏蔽效应,以及增强的接触性能。此外,基于swcnts网络的fet被证明是检测甲型H5N1流感病毒的生物传感器。更大的碳纳米管束和密度更高的碳纳米管束由于增强的半导体特性和束内的金属屏蔽效应而改善了传感性能。
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Bundling effect of semiconductor-enriched single-walled carbon nanotube networks on field-effect transistor performance
Despite continual progress in creating semiconductor-enriched single-walled carbon nanotube (SWCNT) networks, significant challenges still remain in achieving electronically homogeneous channels for field-effect transistors (FETs) due to persisting metallic percolation and uncontrollable nanotube bundling. To address this critical issue, we systematically explored the bundling effect of the SWCNTs on the electrical characteristics of SWCNT network-based FETs. Devices with higher bundle density and larger bundles showed enhanced FET metrics in drive current, on/off ratio, subthreshold swing, transconductance, and thermal dependence, thereby enabling highly uniform and integrated SWCNT FETs at wafer scale. These performance enhancements are attributed to the increased conduction channels, the metallic CNT shielding effect in dense, thick, and locally aligned SWCNT bundles, and enhanced contact properties. Additionally, SWCNT network-based FETs were demonstrated as biosensors to detect the influenza A H5N1 virus. Larger bundles and higher densities of SWCNT improved sensing performance due to enhanced semiconducting properties and the metallic screening effect within the bundles.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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