用于未来OFET应用的zro2 -混合纳米复合MIM电容器的设计及其表征

IF 4.6 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Materials Science in Semiconductor Processing Pub Date : 2025-03-15 Epub Date: 2024-11-30 DOI:10.1016/j.mssp.2024.109180
Aybuke Tavasli , Leszek A. Majewski , M. Afsar Uddin , Berta Gómez-Lor , Levent Trabzon , Sheida Faraji
{"title":"用于未来OFET应用的zro2 -混合纳米复合MIM电容器的设计及其表征","authors":"Aybuke Tavasli ,&nbsp;Leszek A. Majewski ,&nbsp;M. Afsar Uddin ,&nbsp;Berta Gómez-Lor ,&nbsp;Levent Trabzon ,&nbsp;Sheida Faraji","doi":"10.1016/j.mssp.2024.109180","DOIUrl":null,"url":null,"abstract":"<div><div>Organic field-effect transistors (OFETs) have been exploited as sensors for a variety of applications due to their excellent advantages over diodes and other electronic devices. Capacitors are one of the key components of the OFET designs that consist of a dielectric layer sandwiched between two parallel metal plates. The dielectric layer should be thin and/or have a high <em>k</em> constant value to achieve a high capacitance value (C<sub>i</sub>, areal capacitance), so more charge carriers can be accumulated at the interface between the dielectric and the organic semiconductor, for OFETs to operate under low voltage (&lt; 3 V). In this study, high-<em>k</em> nanocomposites (NCs) of ZrO<sub>2</sub> metal oxide ceramic nanoparticles (NPs) in varying concentrations blended in two different polymer matrixes, poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) and cyanoethyl cellulose (CEC) have been utilised as the dielectric layer in metal-insulator-metal (MIM) capacitors. The physical and electrical properties of fabricated MIM capacitors were evaluated. The measured areal capacitance, <em>C</em><sub><em>i</em></sub>, values demonstrated a gradual rise with increasing ZrO<sub>2</sub> metal oxide content in both polymer matrixes. ZrO<sub>2</sub>-PVDF-HFP-based capacitors exhibited a two-fold increase in <em>C</em><sub><em>i</em></sub>, 91.86 ± 6.1 nF/cm<sup>2</sup> (a 140 % increase) for 10 wt % NP content. Similarly, areal capacitance values of 76 ± 3.03 nF/cm<sup>2</sup> (a 45 % rise) was measured on MIMs using CZ10 dielectric layer. High average dielectric constant (<em>k</em>) values of 28.61 and 35.68 for CZ5 and PZ5, respectively) were obtained. As expected, leakage current density increased for higher NP % in polymer matrixes. Nevertheless, all MIMs yielded average leakage current density &lt; 1.75 × 10<sup>−6</sup> (A/cm<sup>2</sup>) at 2 V. Therefore, the reported nanocomposites are suitable dielectric layers for OFETs and as platforms for gas, chemical and photoactivated sensing devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"188 ","pages":"Article 109180"},"PeriodicalIF":4.6000,"publicationDate":"2025-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Designing ZrO2-blended nanocomposite MIM capacitors for future OFET applications and their characterizations\",\"authors\":\"Aybuke Tavasli ,&nbsp;Leszek A. Majewski ,&nbsp;M. Afsar Uddin ,&nbsp;Berta Gómez-Lor ,&nbsp;Levent Trabzon ,&nbsp;Sheida Faraji\",\"doi\":\"10.1016/j.mssp.2024.109180\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Organic field-effect transistors (OFETs) have been exploited as sensors for a variety of applications due to their excellent advantages over diodes and other electronic devices. Capacitors are one of the key components of the OFET designs that consist of a dielectric layer sandwiched between two parallel metal plates. The dielectric layer should be thin and/or have a high <em>k</em> constant value to achieve a high capacitance value (C<sub>i</sub>, areal capacitance), so more charge carriers can be accumulated at the interface between the dielectric and the organic semiconductor, for OFETs to operate under low voltage (&lt; 3 V). In this study, high-<em>k</em> nanocomposites (NCs) of ZrO<sub>2</sub> metal oxide ceramic nanoparticles (NPs) in varying concentrations blended in two different polymer matrixes, poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) and cyanoethyl cellulose (CEC) have been utilised as the dielectric layer in metal-insulator-metal (MIM) capacitors. The physical and electrical properties of fabricated MIM capacitors were evaluated. The measured areal capacitance, <em>C</em><sub><em>i</em></sub>, values demonstrated a gradual rise with increasing ZrO<sub>2</sub> metal oxide content in both polymer matrixes. ZrO<sub>2</sub>-PVDF-HFP-based capacitors exhibited a two-fold increase in <em>C</em><sub><em>i</em></sub>, 91.86 ± 6.1 nF/cm<sup>2</sup> (a 140 % increase) for 10 wt % NP content. Similarly, areal capacitance values of 76 ± 3.03 nF/cm<sup>2</sup> (a 45 % rise) was measured on MIMs using CZ10 dielectric layer. High average dielectric constant (<em>k</em>) values of 28.61 and 35.68 for CZ5 and PZ5, respectively) were obtained. As expected, leakage current density increased for higher NP % in polymer matrixes. Nevertheless, all MIMs yielded average leakage current density &lt; 1.75 × 10<sup>−6</sup> (A/cm<sup>2</sup>) at 2 V. Therefore, the reported nanocomposites are suitable dielectric layers for OFETs and as platforms for gas, chemical and photoactivated sensing devices.</div></div>\",\"PeriodicalId\":18240,\"journal\":{\"name\":\"Materials Science in Semiconductor Processing\",\"volume\":\"188 \",\"pages\":\"Article 109180\"},\"PeriodicalIF\":4.6000,\"publicationDate\":\"2025-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Science in Semiconductor Processing\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S136980012401076X\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"2024/11/30 0:00:00\",\"PubModel\":\"Epub\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S136980012401076X","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2024/11/30 0:00:00","PubModel":"Epub","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

有机场效应晶体管(ofet)由于其优于二极管和其他电子器件的优异优点,已被用作各种应用的传感器。电容器是OFET设计的关键部件之一,它由夹在两个平行金属板之间的介电层组成。为了获得高电容值(Ci,面电容),介电层应该很薄和/或具有高k常数值,以便在介电层和有机半导体之间的界面处积累更多的载流子,使ofet在低电压(<;在这项研究中,不同浓度的ZrO2金属氧化物陶瓷纳米颗粒(NPs)的高k纳米复合材料(nc)混合在两种不同的聚合物基体中,聚偏氟乙烯-共六氟丙烯(PVDF-HFP)和氰乙基纤维素(CEC)被用作金属-绝缘体-金属(MIM)电容器的介电层。对制备的MIM电容器的物理和电学性能进行了评价。测量的面积电容Ci值随着ZrO2金属氧化物含量的增加而逐渐升高。zro2 - pvdf - hfp基电容器的Ci增加了两倍,当NP含量为10 wt %时,Ci增加了91.86±6.1 nF/cm2(增加了140%)。同样,在使用CZ10介电层的mim上测量到的面电容值为76±3.03 nF/cm2(上升45%)。z5和PZ5的平均介电常数(k)分别为28.61和35.68。正如预期的那样,聚合物基体中NP %越高,泄漏电流密度越高。然而,所有的mim都产生了平均泄漏电流密度<;1.75 × 10−6 (A/cm2)。因此,所报道的纳米复合材料是ofet的合适介质层,也是气体、化学和光激活传感器件的平台。
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Designing ZrO2-blended nanocomposite MIM capacitors for future OFET applications and their characterizations
Organic field-effect transistors (OFETs) have been exploited as sensors for a variety of applications due to their excellent advantages over diodes and other electronic devices. Capacitors are one of the key components of the OFET designs that consist of a dielectric layer sandwiched between two parallel metal plates. The dielectric layer should be thin and/or have a high k constant value to achieve a high capacitance value (Ci, areal capacitance), so more charge carriers can be accumulated at the interface between the dielectric and the organic semiconductor, for OFETs to operate under low voltage (< 3 V). In this study, high-k nanocomposites (NCs) of ZrO2 metal oxide ceramic nanoparticles (NPs) in varying concentrations blended in two different polymer matrixes, poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) and cyanoethyl cellulose (CEC) have been utilised as the dielectric layer in metal-insulator-metal (MIM) capacitors. The physical and electrical properties of fabricated MIM capacitors were evaluated. The measured areal capacitance, Ci, values demonstrated a gradual rise with increasing ZrO2 metal oxide content in both polymer matrixes. ZrO2-PVDF-HFP-based capacitors exhibited a two-fold increase in Ci, 91.86 ± 6.1 nF/cm2 (a 140 % increase) for 10 wt % NP content. Similarly, areal capacitance values of 76 ± 3.03 nF/cm2 (a 45 % rise) was measured on MIMs using CZ10 dielectric layer. High average dielectric constant (k) values of 28.61 and 35.68 for CZ5 and PZ5, respectively) were obtained. As expected, leakage current density increased for higher NP % in polymer matrixes. Nevertheless, all MIMs yielded average leakage current density < 1.75 × 10−6 (A/cm2) at 2 V. Therefore, the reported nanocomposites are suitable dielectric layers for OFETs and as platforms for gas, chemical and photoactivated sensing devices.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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