Influence of the homotopy stability perturbation on physical variations of non-local opto-electronic semiconductor materials.

In the current work, we investigate a novel technique specialized in stability perturbation theory to analyze the primary variations such as thermal, carrier, elastic, and mechanical waves in photothermal theory. The interface of the non-local semiconductor material is utilized to study the stability analysis. The problem is established using a 1D opto-electronic-thermoelastic deformation in the context of the photo-thermoelasticity (PTE) framework. The Laplace transform method is used to convert the system from the time domain into the frequency domain, and the boundary conditions for the thermal, elastic, and plasma waves are applied to the interface of the medium. The homotopy perturbation method was used as an innovative approach to analyze the stability of the non-local silicon's primary physical fields. The numerical inversion method is applied, yielding many graphs focusing on important numerical factors such as non-local effects, thermo-energy, and thermo-electric coupling parameters. Investigating dual solutions between stable and unstable regions for critical parameters like thermo-electric and thermo-energy coupling factors demonstrates that the homotopy perturbation technique can effectively analyze the stability analysis. The comparison between silicon and germanium is illustrated graphically. Utilizing the homotopy perturbation technique, we can effectively examine the stability of the primary physical variations with the effect of some values for eigenvalues approaches.