Alexandra Zobova;Maxim Drizovsky;Omer HaLevy;Neta Melech;Shmuel Livne;Slava Krylov
{"title":"带并联运动联动放大器的单防质量谐振MEMS加速度计","authors":"Alexandra Zobova;Maxim Drizovsky;Omer HaLevy;Neta Melech;Shmuel Livne;Slava Krylov","doi":"10.1109/LSENS.2024.3507075","DOIUrl":null,"url":null,"abstract":"We report on a new architecture and theoretical and experimental feasibility study of a resonant accelerometer, combining a robust single proof mass (PM) design with a compliant parallel motion linkage-type force amplifier. The device, incorporating four effectively oblique force-transmitting links and a resonant sensing beam attached at its ends to two shutters, is distinguished by a simple, manufacturable geometry, purely axial, free from any bending, loading of the vibrating sensing beam, and low parasitic compliance. The device was fabricated from the 25 \n<inline-formula><tex-math>$\\mu$</tex-math></inline-formula>\nm thick layer of a silicon-on-insulator (SOI) wafer. The acceleration-dependent frequency of the electrostatically driven 300 \n<inline-formula><tex-math>$\\mu$</tex-math></inline-formula>\nm long and 3.8 \n<inline-formula><tex-math>$\\mu$</tex-math></inline-formula>\nm wide resonator was measured using capacitive sensing, combined with open or closed-loop excitation scenarios. Consistently with the lumped and the full scale FE models prediction, 760 Hz/g sensitivity of the device, with the \n<inline-formula><tex-math>$\\approx$</tex-math></inline-formula>\n 2600 × 2600 \n<inline-formula><tex-math>$\\mu$</tex-math></inline-formula>\nm PM, was demonstrated during the \n<inline-formula><tex-math>$\\pm g$</tex-math></inline-formula>\n experiment.","PeriodicalId":13014,"journal":{"name":"IEEE Sensors Letters","volume":"8 12","pages":"1-4"},"PeriodicalIF":2.2000,"publicationDate":"2024-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Single Proof Mass Resonant MEMS Accelerometer With Parallel Motion Linkage Amplifier\",\"authors\":\"Alexandra Zobova;Maxim Drizovsky;Omer HaLevy;Neta Melech;Shmuel Livne;Slava Krylov\",\"doi\":\"10.1109/LSENS.2024.3507075\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on a new architecture and theoretical and experimental feasibility study of a resonant accelerometer, combining a robust single proof mass (PM) design with a compliant parallel motion linkage-type force amplifier. The device, incorporating four effectively oblique force-transmitting links and a resonant sensing beam attached at its ends to two shutters, is distinguished by a simple, manufacturable geometry, purely axial, free from any bending, loading of the vibrating sensing beam, and low parasitic compliance. The device was fabricated from the 25 \\n<inline-formula><tex-math>$\\\\mu$</tex-math></inline-formula>\\nm thick layer of a silicon-on-insulator (SOI) wafer. The acceleration-dependent frequency of the electrostatically driven 300 \\n<inline-formula><tex-math>$\\\\mu$</tex-math></inline-formula>\\nm long and 3.8 \\n<inline-formula><tex-math>$\\\\mu$</tex-math></inline-formula>\\nm wide resonator was measured using capacitive sensing, combined with open or closed-loop excitation scenarios. Consistently with the lumped and the full scale FE models prediction, 760 Hz/g sensitivity of the device, with the \\n<inline-formula><tex-math>$\\\\approx$</tex-math></inline-formula>\\n 2600 × 2600 \\n<inline-formula><tex-math>$\\\\mu$</tex-math></inline-formula>\\nm PM, was demonstrated during the \\n<inline-formula><tex-math>$\\\\pm g$</tex-math></inline-formula>\\n experiment.\",\"PeriodicalId\":13014,\"journal\":{\"name\":\"IEEE Sensors Letters\",\"volume\":\"8 12\",\"pages\":\"1-4\"},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2024-11-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Sensors Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10769034/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Sensors Letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10769034/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Single Proof Mass Resonant MEMS Accelerometer With Parallel Motion Linkage Amplifier
We report on a new architecture and theoretical and experimental feasibility study of a resonant accelerometer, combining a robust single proof mass (PM) design with a compliant parallel motion linkage-type force amplifier. The device, incorporating four effectively oblique force-transmitting links and a resonant sensing beam attached at its ends to two shutters, is distinguished by a simple, manufacturable geometry, purely axial, free from any bending, loading of the vibrating sensing beam, and low parasitic compliance. The device was fabricated from the 25
$\mu$
m thick layer of a silicon-on-insulator (SOI) wafer. The acceleration-dependent frequency of the electrostatically driven 300
$\mu$
m long and 3.8
$\mu$
m wide resonator was measured using capacitive sensing, combined with open or closed-loop excitation scenarios. Consistently with the lumped and the full scale FE models prediction, 760 Hz/g sensitivity of the device, with the
$\approx$
2600 × 2600
$\mu$
m PM, was demonstrated during the
$\pm g$
experiment.