0.41-ns CLK-OUT 延迟、0.22-μVrms 输入延迟噪声 CMOS 集成动态比较器,带翻转电容器,可重复使用电荷

IF 2.2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE IEEE Solid-State Circuits Letters Pub Date : 2024-12-02 DOI:10.1109/LSSC.2024.3510389
Kwok Cheong Li;Xinhang Xu;Jihang Gao;Siyuan Ye;Jiajia Cui;Yacong Zhang;Ru Huang;Linxiao Shen
{"title":"0.41-ns CLK-OUT 延迟、0.22-μVrms 输入延迟噪声 CMOS 集成动态比较器,带翻转电容器,可重复使用电荷","authors":"Kwok Cheong Li;Xinhang Xu;Jihang Gao;Siyuan Ye;Jiajia Cui;Yacong Zhang;Ru Huang;Linxiao Shen","doi":"10.1109/LSSC.2024.3510389","DOIUrl":null,"url":null,"abstract":"A high-speed and power-efficient CMOS integration dynamic comparator is presented. Low-input-referred noise is accomplished by CMOS integration. To achieve low-power consumption, a charge-reusing scheme by flipping the flying capacitors across the pMOS/nMOS integration nodes is introduced. The 22-nm prototype achieves a 0.22-\n<inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>\nVrms input-referred noise with an energy consumption of 227-fJ per conversion, which is improved by \n<inline-formula> <tex-math>$2\\times $ </tex-math></inline-formula>\n compared with the StrongARM counterpart in the same process. Furthermore, with the latch stage embedded, the achieved 0.41-ns CLK-OUT delay shows an over \n<inline-formula> <tex-math>$20\\times $ </tex-math></inline-formula>\n improvement compared with the existing works with CMOS integration.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":"8 ","pages":"5-8"},"PeriodicalIF":2.2000,"publicationDate":"2024-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 0.41-ns CLK-OUT Delay, 0.22-μVrms Input-Referred Noise CMOS Integration Dynamic Comparator With Flipping Capacitor for Charge Reuse\",\"authors\":\"Kwok Cheong Li;Xinhang Xu;Jihang Gao;Siyuan Ye;Jiajia Cui;Yacong Zhang;Ru Huang;Linxiao Shen\",\"doi\":\"10.1109/LSSC.2024.3510389\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A high-speed and power-efficient CMOS integration dynamic comparator is presented. Low-input-referred noise is accomplished by CMOS integration. To achieve low-power consumption, a charge-reusing scheme by flipping the flying capacitors across the pMOS/nMOS integration nodes is introduced. The 22-nm prototype achieves a 0.22-\\n<inline-formula> <tex-math>$\\\\mu $ </tex-math></inline-formula>\\nVrms input-referred noise with an energy consumption of 227-fJ per conversion, which is improved by \\n<inline-formula> <tex-math>$2\\\\times $ </tex-math></inline-formula>\\n compared with the StrongARM counterpart in the same process. Furthermore, with the latch stage embedded, the achieved 0.41-ns CLK-OUT delay shows an over \\n<inline-formula> <tex-math>$20\\\\times $ </tex-math></inline-formula>\\n improvement compared with the existing works with CMOS integration.\",\"PeriodicalId\":13032,\"journal\":{\"name\":\"IEEE Solid-State Circuits Letters\",\"volume\":\"8 \",\"pages\":\"5-8\"},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2024-12-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Solid-State Circuits Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10772614/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Solid-State Circuits Letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10772614/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
引用次数: 0

摘要

提出了一种高速、低功耗的CMOS集成动态比较器。低输入参考噪声是通过CMOS集成实现的。为了实现低功耗,提出了一种通过在pMOS/nMOS集成节点上翻转飞行电容器来实现电荷再利用的方案。22nm原型实现了0.22- $\mu $ Vrms的输入参考噪声,每次转换能耗为227-fJ,与相同工艺的StrongARM对应产品相比,提高了$2 $。此外,嵌入锁存器后,实现的0.41 ns CLK-OUT延迟比现有CMOS集成工作提高了20多倍。
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A 0.41-ns CLK-OUT Delay, 0.22-μVrms Input-Referred Noise CMOS Integration Dynamic Comparator With Flipping Capacitor for Charge Reuse
A high-speed and power-efficient CMOS integration dynamic comparator is presented. Low-input-referred noise is accomplished by CMOS integration. To achieve low-power consumption, a charge-reusing scheme by flipping the flying capacitors across the pMOS/nMOS integration nodes is introduced. The 22-nm prototype achieves a 0.22- $\mu $ Vrms input-referred noise with an energy consumption of 227-fJ per conversion, which is improved by $2\times $ compared with the StrongARM counterpart in the same process. Furthermore, with the latch stage embedded, the achieved 0.41-ns CLK-OUT delay shows an over $20\times $ improvement compared with the existing works with CMOS integration.
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来源期刊
IEEE Solid-State Circuits Letters
IEEE Solid-State Circuits Letters Engineering-Electrical and Electronic Engineering
CiteScore
4.30
自引率
3.70%
发文量
52
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