{"title":"具有镜面和漫射表面的硅太阳能电池的光子回收和效率限制","authors":"Mykhaylo Evstigneev","doi":"10.1109/JPHOTOV.2024.3496520","DOIUrl":null,"url":null,"abstract":"Analytical expressions for photon reabsorption probability in a solar cell, in which one of the surfaces, front or back, is specular and the other one is diffusive are obtained within the ray optics approximation. Due to the free carrier absorption, the light-generated current and the radiative recombination coefficient depend on the electron-hole pair density within the cell. Accurate analytical approximations that describe this effect are derived. These formulae are applied to evaluate the limit efficiency of a c-Si solar cells, whose one surface is specular and the other is diffusive, under AM1.5G irradiation at \n<inline-formula><tex-math>$ 25\\,^{\\circ }$</tex-math></inline-formula>\nC. For the solar cells with specular front and diffusive back surfaces, the efficiency is maximized at the cell thickness of 110 \n<inline-formula><tex-math>$\\mu$</tex-math></inline-formula>\nm and has a value of 29.4%. In the configuration with diffusive front surface, the limiting efficiency of 29.5% is achieved at the optimal thickness of 100 \n<inline-formula><tex-math>$\\mu$</tex-math></inline-formula>\nm regardless of the texturing type of the back surface.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 1","pages":"95-104"},"PeriodicalIF":2.5000,"publicationDate":"2024-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Photon Recycling and Efficiency Limit of a Silicon Solar Cell With a Specular and a Diffusive Surface\",\"authors\":\"Mykhaylo Evstigneev\",\"doi\":\"10.1109/JPHOTOV.2024.3496520\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Analytical expressions for photon reabsorption probability in a solar cell, in which one of the surfaces, front or back, is specular and the other one is diffusive are obtained within the ray optics approximation. Due to the free carrier absorption, the light-generated current and the radiative recombination coefficient depend on the electron-hole pair density within the cell. Accurate analytical approximations that describe this effect are derived. These formulae are applied to evaluate the limit efficiency of a c-Si solar cells, whose one surface is specular and the other is diffusive, under AM1.5G irradiation at \\n<inline-formula><tex-math>$ 25\\\\,^{\\\\circ }$</tex-math></inline-formula>\\nC. For the solar cells with specular front and diffusive back surfaces, the efficiency is maximized at the cell thickness of 110 \\n<inline-formula><tex-math>$\\\\mu$</tex-math></inline-formula>\\nm and has a value of 29.4%. In the configuration with diffusive front surface, the limiting efficiency of 29.5% is achieved at the optimal thickness of 100 \\n<inline-formula><tex-math>$\\\\mu$</tex-math></inline-formula>\\nm regardless of the texturing type of the back surface.\",\"PeriodicalId\":445,\"journal\":{\"name\":\"IEEE Journal of Photovoltaics\",\"volume\":\"15 1\",\"pages\":\"95-104\"},\"PeriodicalIF\":2.5000,\"publicationDate\":\"2024-11-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal of Photovoltaics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10767706/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENERGY & FUELS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Photovoltaics","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10767706/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENERGY & FUELS","Score":null,"Total":0}
Photon Recycling and Efficiency Limit of a Silicon Solar Cell With a Specular and a Diffusive Surface
Analytical expressions for photon reabsorption probability in a solar cell, in which one of the surfaces, front or back, is specular and the other one is diffusive are obtained within the ray optics approximation. Due to the free carrier absorption, the light-generated current and the radiative recombination coefficient depend on the electron-hole pair density within the cell. Accurate analytical approximations that describe this effect are derived. These formulae are applied to evaluate the limit efficiency of a c-Si solar cells, whose one surface is specular and the other is diffusive, under AM1.5G irradiation at
$ 25\,^{\circ }$
C. For the solar cells with specular front and diffusive back surfaces, the efficiency is maximized at the cell thickness of 110
$\mu$
m and has a value of 29.4%. In the configuration with diffusive front surface, the limiting efficiency of 29.5% is achieved at the optimal thickness of 100
$\mu$
m regardless of the texturing type of the back surface.
期刊介绍:
The IEEE Journal of Photovoltaics is a peer-reviewed, archival publication reporting original and significant research results that advance the field of photovoltaics (PV). The PV field is diverse in its science base ranging from semiconductor and PV device physics to optics and the materials sciences. The journal publishes articles that connect this science base to PV science and technology. The intent is to publish original research results that are of primary interest to the photovoltaic specialist. The scope of the IEEE J. Photovoltaics incorporates: fundamentals and new concepts of PV conversion, including those based on nanostructured materials, low-dimensional physics, multiple charge generation, up/down converters, thermophotovoltaics, hot-carrier effects, plasmonics, metamorphic materials, luminescent concentrators, and rectennas; Si-based PV, including new cell designs, crystalline and non-crystalline Si, passivation, characterization and Si crystal growth; polycrystalline, amorphous and crystalline thin-film solar cell materials, including PV structures and solar cells based on II-VI, chalcopyrite, Si and other thin film absorbers; III-V PV materials, heterostructures, multijunction devices and concentrator PV; optics for light trapping, reflection control and concentration; organic PV including polymer, hybrid and dye sensitized solar cells; space PV including cell materials and PV devices, defects and reliability, environmental effects and protective materials; PV modeling and characterization methods; and other aspects of PV, including modules, power conditioning, inverters, balance-of-systems components, monitoring, analyses and simulations, and supporting PV module standards and measurements. Tutorial and review papers on these subjects are also published and occasionally special issues are published to treat particular areas in more depth and breadth.