Enhanced irradiation stability of MOSFET devices realized by improving nucleus density of CrxNbMoTaW generated by lattice shrinkage

The limited irradiation stability of metal-oxide-semiconductor field-effect transistor (MOSFET) devices has restricted their application in deep space exploration missions. Therefore, it is an urgent need to develop a new and efficient packaging hardening techniques to improve the irradiation stability of MOSFET devices. Herein, Cr_0.5NbMoTaW was prepared by localized high-energy mechanical alloying and coated on the MOSFET's surface, and the packaged MOSFETs exhibit excellent irradiation stability. The threshold voltage change value of Cr_0.5NbMoTaW packaged MOSFET device (0.26 V) is lower than the unpackaged MOSFET (4.15 V) after high-energy electron irradiation. Experimental and theoretical calculations show that Cr induces lattice shrinkage of Cr_0.5NbMoTaW high-entropy alloys, leading to an improved density of nucleus. This increases the probability of elastic and inelastic collision between high-energy electrons and the nucleus, thus achieving excellent irradiation stability of packaged MOSFET devices. This work presents a strategy to improve the irradiation stability of MOSFET devices by using high-entropy alloy packaging.