Bilawal Ali;Yubin Gong;Shaomeng Wang;Yang Dong;Jibran Latif;Muhammad Khawar Nadeem;Atif Jameel;Zhanliang Wang
{"title":"为 C 波段扩展交互振荡器设计双周期角径向射频电路并进行冷测试","authors":"Bilawal Ali;Yubin Gong;Shaomeng Wang;Yang Dong;Jibran Latif;Muhammad Khawar Nadeem;Atif Jameel;Zhanliang Wang","doi":"10.1109/TED.2024.3493064","DOIUrl":null,"url":null,"abstract":"A C-band angular bi-periodic angular radial EIO (BPAREIO) is proposed for high-power microwave (HPM) applications. It offers miniaturization, high efficiency, and low magnetic field operation. A divergent angular radial sheet electron beam (ARSEB) with an angle of 14° and a current of 101 A is employed to operate the seven-gap angular radial cavities. Angular radial cavities are coupled by two sectoral cavities having an opening angle \n<inline-formula> <tex-math>$\\beta $ </tex-math></inline-formula>\n. Cavity characteristics, such as dispersion, scattering parameters, normalized beam conductance, electric field distribution, and stability, are analyzed to optimize the design for \n<inline-formula> <tex-math>$\\pi $ </tex-math></inline-formula>\n-mode operation. To further enhance the performance of BPAREIO, ridges are incorporated into interaction gaps near the beam tunnel. This modification leads to an enhanced radial electric field near the beam tunnel, increasing characteristic impedance (R/Q). In particle-in cell (PIC) simulations, ridge-loaded BPAREIO demonstrated in modeling an RF peak output power of 6.2 MW at a frequency of 5.805 GHz when applying a beam voltage of 89 kV and a magnetic field of 0.3 T, yielding a peak power efficiency of 69.5%. In contrast, the BPAREIO without ridges expected a peak output power of 5.4 MW and an efficiency of 59.5% at 5.885 GHz, using the same beam parameters. Consequently, the ridge-loaded BPAREIO predicted a 16.7% increase in peak electronic efficiency compared with the BPAREIO without ridges. Moreover, ridge-loaded BPAREIO is fabricated, and experimental results closely match those obtained from simulation.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 1","pages":"417-423"},"PeriodicalIF":2.9000,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design and Cold Testing of a Bi-Periodic Angular Radial RF Circuit for a C-Band Extended Interaction Oscillator\",\"authors\":\"Bilawal Ali;Yubin Gong;Shaomeng Wang;Yang Dong;Jibran Latif;Muhammad Khawar Nadeem;Atif Jameel;Zhanliang Wang\",\"doi\":\"10.1109/TED.2024.3493064\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A C-band angular bi-periodic angular radial EIO (BPAREIO) is proposed for high-power microwave (HPM) applications. It offers miniaturization, high efficiency, and low magnetic field operation. A divergent angular radial sheet electron beam (ARSEB) with an angle of 14° and a current of 101 A is employed to operate the seven-gap angular radial cavities. Angular radial cavities are coupled by two sectoral cavities having an opening angle \\n<inline-formula> <tex-math>$\\\\beta $ </tex-math></inline-formula>\\n. Cavity characteristics, such as dispersion, scattering parameters, normalized beam conductance, electric field distribution, and stability, are analyzed to optimize the design for \\n<inline-formula> <tex-math>$\\\\pi $ </tex-math></inline-formula>\\n-mode operation. To further enhance the performance of BPAREIO, ridges are incorporated into interaction gaps near the beam tunnel. This modification leads to an enhanced radial electric field near the beam tunnel, increasing characteristic impedance (R/Q). 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引用次数: 0
摘要
提出了一种用于高功率微波(HPM)应用的c波段角双周期角径向EIO (BPAREIO)。它具有小型化、高效率和低磁场操作的特点。采用角为14°、电流为101 A的发散角径向片状电子束(ARSEB)对七间隙角径向腔进行操作。角径向腔由两个具有开口角$\beta $的扇形腔耦合。分析了色散、散射参数、归一化光束电导、电场分布和稳定性等空腔特性,以优化$\pi $模式工作的设计。为了进一步提高BPAREIO的性能,在光束隧道附近的相互作用间隙中加入了脊。这种改变导致光束隧道附近的径向电场增强,特性阻抗(R/Q)增加。在粒子池(PIC)模拟中,脊载BPAREIO在施加89 kV的波束电压和0.3 T的磁场时,在5.805 GHz的频率下建模了6.2 MW的射频峰值输出功率,产生了69.5的峰值功率效率%. In contrast, the BPAREIO without ridges expected a peak output power of 5.4 MW and an efficiency of 59.5% at 5.885 GHz, using the same beam parameters. Consequently, the ridge-loaded BPAREIO predicted a 16.7% increase in peak electronic efficiency compared with the BPAREIO without ridges. Moreover, ridge-loaded BPAREIO is fabricated, and experimental results closely match those obtained from simulation.
Design and Cold Testing of a Bi-Periodic Angular Radial RF Circuit for a C-Band Extended Interaction Oscillator
A C-band angular bi-periodic angular radial EIO (BPAREIO) is proposed for high-power microwave (HPM) applications. It offers miniaturization, high efficiency, and low magnetic field operation. A divergent angular radial sheet electron beam (ARSEB) with an angle of 14° and a current of 101 A is employed to operate the seven-gap angular radial cavities. Angular radial cavities are coupled by two sectoral cavities having an opening angle
$\beta $
. Cavity characteristics, such as dispersion, scattering parameters, normalized beam conductance, electric field distribution, and stability, are analyzed to optimize the design for
$\pi $
-mode operation. To further enhance the performance of BPAREIO, ridges are incorporated into interaction gaps near the beam tunnel. This modification leads to an enhanced radial electric field near the beam tunnel, increasing characteristic impedance (R/Q). In particle-in cell (PIC) simulations, ridge-loaded BPAREIO demonstrated in modeling an RF peak output power of 6.2 MW at a frequency of 5.805 GHz when applying a beam voltage of 89 kV and a magnetic field of 0.3 T, yielding a peak power efficiency of 69.5%. In contrast, the BPAREIO without ridges expected a peak output power of 5.4 MW and an efficiency of 59.5% at 5.885 GHz, using the same beam parameters. Consequently, the ridge-loaded BPAREIO predicted a 16.7% increase in peak electronic efficiency compared with the BPAREIO without ridges. Moreover, ridge-loaded BPAREIO is fabricated, and experimental results closely match those obtained from simulation.
期刊介绍:
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.