基于栅极电压扫描和机器学习的单fet气体传感器气体分类

IF 2.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Electron Devices Pub Date : 2024-11-26 DOI:10.1109/TED.2024.3486261
Lisa Sarkar;Soumen Paul;Avik Sett;Ambika Kumari;Tarun Kanti Bhattacharyya
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引用次数: 0

摘要

汽车和化工行业不受控制地释放各种有害气体,这就需要精确的气体分类和检测方法。在此背景下,本文提出了一种有效的方法,利用单个基于场效应晶体管(FET)的气体传感器对氨气、甲醛、甲苯和丙酮四种气体进行分类和检测。场效应晶体管传感器的栅极电压在这一分类机制中发挥了关键作用。L- 抗坏血酸功能化氧化石墨烯(GO)被用作 FET 器件的传感材料。最初,通过改变施加的栅极电压来捕捉所制造的场效应晶体管传感器的各种特征(即响应百分比、响应时间和恢复时间)。此外,还训练了决策树 (DT)、支持向量机 (SVM)、梯度提升 (GB) 和随机森林 (RF) 等分类算法,以自动预测目标气体。除 SVM 分类器外,其他三种分类器的准确率都达到了 73%。当四种气体中的任何一种未知气体暴露于单门调谐传感器时,使用机器学习算法准确检测出不同栅极电压下的四种气体,取得了丰硕成果。此外,它还节省了系统的功耗,因为单个传感器的作用类似于多个传感器。
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Classification of Gases With Single FET-Based Gas Sensor Through Gate Voltage Sweeping and Machine Learning
Uncontrolled release of various harmful gases from automobiles and chemical industries demands accurate methods for gas classification and detection. In this context, this article proposes an effective method to classify and detect four gases—ammonia, formaldehyde, toluene, and acetone using a single field-effect transistor (FET)-based gas sensor. The gate voltage of the FET sensor played a pivotal role in this classification mechanism. L-ascorbic acid functionalized graphene oxide (GO) was used as the sensing material of the FET device. Initially, various features of the fabricated FET sensor (i.e., % of response, response time, and recovery time) were captured by varying the applied gate voltage. Furthermore, classification algorithms such as decision tree (DT), support vector machine (SVM), gradient boosting (GB), and random forest (RF) were trained to automatically predict the target gases. An accuracy of 73% was achieved for all three classifiers other than the SVM classifier. The use of machine learning algorithms was fruitful to accurately detect four gases at different gate voltages when any unknown one among the four was exposed to the single gate-tuned sensor. Moreover, it also saved the system’s power consumption as a single sensor was behaving like several sensors.
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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