用于w波段螺旋陀螺行波管的兆瓦级低速扩散尖端炮

IF 2.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Electron Devices Pub Date : 2024-11-18 DOI:10.1109/TED.2024.3492169
S. V. Samsonov;I. G. Gachev;E. I. Demikhov;V. V. Lysenko
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引用次数: 0

摘要

尖端枪被设计为高功率w频段振动陀螺仪行波光管与螺旋波纹波导的操作(gyro-TWT)的二次谐波磁场的回旋频率约2 t .根据模拟执行使用各种软件工具,阐述了枪使的一代axis-encircling电子束能量90 keV,螺距1.2倍,低于6%的速度传播束电流从10到15。由于极宽的发射环径向宽度为其平均半径的46%,因此在5 A/cm2的中等阴极负载下实现了高光束电流。在理想轴对称的情况下,由于空间电荷力的积极影响,横向速度的传播可以小到2%。
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A Megawatt-Level Cusp Gun With Low Velocity Spread for W-Band Helical Gyro-TWT
A cusp gun has been designed for a high-power W-band gyrotron traveling-wave tube (gyro-TWT) with a helically corrugated waveguide operating at the second harmonic of the cyclotron frequency in a magnetic field of about 2 T. According to simulations performed using various software tools, the elaborated gun enables the generation of an axis-encircling electron beam with an energy of 90 keV, a pitch factor of 1.2, and a velocity spread of less than 6% at beam currents ranging from 10 to 15 A. A high beam current is achieved at a moderate cathode loading of 5 A/cm2 due to a very wide emitting ring with a radial width of 46% of its mean radius. In the case of ideal axial symmetry, the spread of transverse velocities can be as small as 2%, owing to the positive impact of space-charge forces.
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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