{"title":"先进的Bragg谐振器集成在交错双叶片结构的g波段行波管中增强带宽和稳定性","authors":"Junyoung Lee;Hong Eun Choi;Wonjin Choi;EunMi Choi","doi":"10.1109/TED.2024.3509384","DOIUrl":null,"url":null,"abstract":"This article presents the design and analysis of a wideband staggered double vane (SDV) sheet-beam-based traveling-wave tube (TWT) for stable amplification in the G-band. Unlike conventional SDV structures, which often suffer from oscillations within the interaction region due to upper and lower cutoff regions, our design employs several key innovations to overcome these limitations. First, the newly designed filter configuration effectively eliminates oscillations within the interaction region. Second, the shape of the Bragg resonator is modified to a diamond configuration, which significantly enhanced impedance matching around 200 GHz, ensuring broader bandwidth and improved transmission characteristics. Finally, we discuss the advantages of E-plane fabrication compared to H-plane fabrication and presents a study on the design of an E-plane filter structure that is feasible for manufacturing. Particle-in-cell (PIC) simulations and experimental validations confirm that our proposed design achieves a 40 GHz 3 dB bandwidth and stable operation without oscillations, demonstrating its potential for high-performance millimeter-wave (mmWave) applications.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 1","pages":"459-466"},"PeriodicalIF":2.9000,"publicationDate":"2024-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Advanced Bragg Resonator Integration for Enhanced Bandwidth and Stability in G-Band TWT With Staggered Double Vane Structure\",\"authors\":\"Junyoung Lee;Hong Eun Choi;Wonjin Choi;EunMi Choi\",\"doi\":\"10.1109/TED.2024.3509384\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This article presents the design and analysis of a wideband staggered double vane (SDV) sheet-beam-based traveling-wave tube (TWT) for stable amplification in the G-band. Unlike conventional SDV structures, which often suffer from oscillations within the interaction region due to upper and lower cutoff regions, our design employs several key innovations to overcome these limitations. First, the newly designed filter configuration effectively eliminates oscillations within the interaction region. Second, the shape of the Bragg resonator is modified to a diamond configuration, which significantly enhanced impedance matching around 200 GHz, ensuring broader bandwidth and improved transmission characteristics. Finally, we discuss the advantages of E-plane fabrication compared to H-plane fabrication and presents a study on the design of an E-plane filter structure that is feasible for manufacturing. Particle-in-cell (PIC) simulations and experimental validations confirm that our proposed design achieves a 40 GHz 3 dB bandwidth and stable operation without oscillations, demonstrating its potential for high-performance millimeter-wave (mmWave) applications.\",\"PeriodicalId\":13092,\"journal\":{\"name\":\"IEEE Transactions on Electron Devices\",\"volume\":\"72 1\",\"pages\":\"459-466\"},\"PeriodicalIF\":2.9000,\"publicationDate\":\"2024-12-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Electron Devices\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10807051/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10807051/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Advanced Bragg Resonator Integration for Enhanced Bandwidth and Stability in G-Band TWT With Staggered Double Vane Structure
This article presents the design and analysis of a wideband staggered double vane (SDV) sheet-beam-based traveling-wave tube (TWT) for stable amplification in the G-band. Unlike conventional SDV structures, which often suffer from oscillations within the interaction region due to upper and lower cutoff regions, our design employs several key innovations to overcome these limitations. First, the newly designed filter configuration effectively eliminates oscillations within the interaction region. Second, the shape of the Bragg resonator is modified to a diamond configuration, which significantly enhanced impedance matching around 200 GHz, ensuring broader bandwidth and improved transmission characteristics. Finally, we discuss the advantages of E-plane fabrication compared to H-plane fabrication and presents a study on the design of an E-plane filter structure that is feasible for manufacturing. Particle-in-cell (PIC) simulations and experimental validations confirm that our proposed design achieves a 40 GHz 3 dB bandwidth and stable operation without oscillations, demonstrating its potential for high-performance millimeter-wave (mmWave) applications.
期刊介绍：
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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