一种基于自适应射频增益阻抗匹配和锗分离iq泄漏抑制结构的40纳米CMOS 0.2-2.6 GHz可重构接收机

IF 2.8 2区 工程技术 Q2 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE IEEE Transactions on Very Large Scale Integration (VLSI) Systems Pub Date : 2024-10-30 DOI:10.1109/TVLSI.2024.3477731
Zhaolin Yang;Jing Jin;Xiaoming Liu;Jianjun Zhou
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引用次数: 0

摘要

本文提出了一种0.2-2.6 GHz可重构直接转换接收机。接收机的高线性模式和高增益模式可以通过旁路或包括低噪声放大器(LNA)级来配置。设计了一个敏捷切换模块来促进模式转换。在高增益模式下,提出了一种基于射频增益自适应阻抗匹配技术的变增益电流复用并联反馈LNA。在混频器级中采用了Gm分离的IQ泄漏抑制(GSIQLS)结构,而不是在I路和q路中使用共享的跨导(Gm)级,以减少由非理想本振(LO)信号重叠引起的复杂和频率相关的IQ不匹配。在基带,增益和带宽都是可配置的,通过利用双四通低通滤波器(LPF)和可编程增益放大器(PGA)。该接收器采用40纳米CMOS技术制造。测量结果表明,最大转换增益为78.5 dB,最小噪声系数(NF)为2.5 dB。输入1db压缩点(IP1dB)、带内(IB)三阶输入参考截距点(IIP3)和带外(OOB) IIP3分别大于0、9.7和13.1 dBm。在410 kHz至24 MHz的基带带宽范围内,正交接收机的增益和相位失配分别小于0.3 dB和1°。接收机占地面积0.605 mm2,功耗75.4 mW。
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A 0.2–2.6 GHz Reconfigurable Receiver Using RF-Gain-Adapted Impedance Matching and Gm-Separated IQ-Leakage Suppression Structure in 40-nm CMOS
A 0.2–2.6 GHz reconfigurable direct conversion receiver is proposed in this article. The receiver’s high-linearity mode and high-gain mode can be configured by either bypassing or including the low-noise amplifier (LNA) stage. An agile-switching module is designed to facilitate the mode transitioning. In high-gain mode, a variable-gain current-reused shunt-feedback (VGCRSF) LNA with radio frequency (RF) gain-adapted impedance matching technique is proposed. Instead of utilizing a shared transconductance (Gm) stage in both the I- and Q-path, the Gm-separated IQ-leakage suppression (GSIQLS) structure is employed in the mixer stage to reduce the complex and frequency-dependent IQ mismatch engendered by the nonideal local oscillator (LO) signal overlap. In baseband, both the gain and the bandwidth are made configurable through the utilization of a bi-quad low pass filter (LPF) and a programmable gain amplifier (PGA). The proposed receiver is fabricated in a 40-nm CMOS technology. Measurement results indicate a maximum conversion gain of 78.5 dB and a minimum noise figure (NF) of 2.5 dB are achieved. The input 1-dB compression point (IP1dB), in-band (IB) third-order input-referred intercept point (IIP3), and out-of-band (OOB) IIP3 are larger than 0, 9.7, and 13.1 dBm, respectively. The gain and phase mismatch of the quadrature receiver are lower than 0.3 dB and 1°, respectively, over the baseband bandwidth ranging from 410 kHz to 24 MHz. The receiver occupies an area of 0.605 mm2 and consumes a power of 75.4 mW.
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来源期刊
CiteScore
6.40
自引率
7.10%
发文量
187
审稿时长
3.6 months
期刊介绍: The IEEE Transactions on VLSI Systems is published as a monthly journal under the co-sponsorship of the IEEE Circuits and Systems Society, the IEEE Computer Society, and the IEEE Solid-State Circuits Society. Design and realization of microelectronic systems using VLSI/ULSI technologies require close collaboration among scientists and engineers in the fields of systems architecture, logic and circuit design, chips and wafer fabrication, packaging, testing and systems applications. Generation of specifications, design and verification must be performed at all abstraction levels, including the system, register-transfer, logic, circuit, transistor and process levels. To address this critical area through a common forum, the IEEE Transactions on VLSI Systems have been founded. The editorial board, consisting of international experts, invites original papers which emphasize and merit the novel systems integration aspects of microelectronic systems including interactions among systems design and partitioning, logic and memory design, digital and analog circuit design, layout synthesis, CAD tools, chips and wafer fabrication, testing and packaging, and systems level qualification. Thus, the coverage of these Transactions will focus on VLSI/ULSI microelectronic systems integration.
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