非箝位电感开关(UIS)测试中校正晶体管单脉冲雪崩能量(Eas)的电路电感测量

IF 2.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Electron Devices Pub Date : 2024-12-17 DOI:10.1109/TED.2024.3509398
Jian-Hsing Lee;Ching-Ho Li;Chih-Cherng Liao;Gong-Kai Lin;Yu-Sheng Chiu;Chieh-Yao Chuang;Ke-Horng Chen
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引用次数: 0

摘要

从非箝位电感开关(UIS)测试中得到的单模雪崩能量(${E}_{\text {as}}}\text{)}$在许多应用笔记和文献中被用作晶体管的坚固性指标。电感是${E}_{\text {as}}$计算的关键参数。从在线测量中,发现通道关断时间(${t}_{\text {off}}\text{)}$处的电感小于UIS测试下功率晶体管的默认电感。然而,大多数美国测试人员仍然使用默认电感来计算${E}_{\text {as}}$。本文研究了在UIS的任意测试条件下,任意晶体管在${t}_{\text {off}}$期间的电感值是否能保持恒定,以及空芯电感在${t}_{\text {off}}$期间的电感值小于默认电感值的原因。在没有铁氧体铁芯的情况下,在UIS测试过程中,空芯电感的磁化强度(M)是由涡流引起的,随着电流的增大而增大,随着电流的减小而线性减小。因此,差分磁化(dM/dH)是恒定的,在通道导通时间(${t}_{\text {on}}}\text{)}$和关断时间${t}_{\text {off}}$时产生两种不同的电感。
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In-Circuit Inductance Measurement to Correct the Single-Pulse Avalanche Energy (Eas) of Transistor Under the Unclamped Inductive-Switching (UIS) Test
The single-mode avalanche energy ( ${E}_{\text {as}}\text {)}$ evaluated from the unclamped inductive-switching (UIS) test has been used in many application notes and literature as the ruggedness index of a transistor. The inductance is the key parameter for ${E}_{\text {as}}$ calculation. From the in-circuit measurement, the inductance at the channel turn-off time ( ${t}_{\text {off}}\text {)}$ is found smaller than the default inductance for the power transistor under the UIS test. However, most UIS testers still use the default inductance to calculate ${E}_{\text {as}}$ . In this article, whether the inductance can keep constant during ${t}_{\text {off}}$ for any transistor under any test condition of UIS and why it is smaller than the default inductance during ${t}_{\text {off}}$ for air core inductors is investigated. Without the ferrite core, the magnetization (M) of the air core inductor during the UIS test is caused by the eddy currents, which increase with increasing current and decrease with decreasing current linearly. Therefore, the differential magnetization (dM/dH) is constant, resulting in two different inductances during channel turn-on time ( ${t}_{\text {on}}\text {)}$ and turn-off time ${t}_{\text {off}}$ .
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
期刊最新文献
Table of Contents IEEE ELECTRON DEVICES SOCIETY IEEE Transactions on Electron Devices Information for Authors Advanced Bragg Resonator Integration for Enhanced Bandwidth and Stability in G-Band TWT With Staggered Double Vane Structure In-Circuit Inductance Measurement to Correct the Single-Pulse Avalanche Energy (Eas) of Transistor Under the Unclamped Inductive-Switching (UIS) Test
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