使用间接加热相变开关改进功率处理的非对称和对称单极双掷

IF 2.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Electron Devices Pub Date : 2024-11-14 DOI:10.1109/TED.2024.3492136
Nicolás Wainstein;Ami Orren;Rivka-Galya Nir-Harwood;Eilam Yalon;Shahar Kvatinsky
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引用次数: 0

摘要

四端间接加热相变开关(IPCSs)由于其最先进的截止频率、非易失性、CMOS兼容性和卓越的线性性,已成为射频集成电路(RFIC)应用的优秀候选者。然而,IPCS的性能受到关闭状态下相对低功耗处理能力的限制,受到Ovonic阈值开关(OTS)现象的限制。在本文中,我们建议使用由两个串联IPCS与另外两个串联IPCS并联组成的四组配置。这种串联连接增加了有效阈值电压,从而提高了与单个设备相比的功率处理能力。我们通过实验证明了在非对称和对称单极双掷(SPDT)开关中实现这种四组配置。这些设计采用内部工艺制造,在dc- 15ghz频段内实现了低于0.8 dB的插入损耗(IL)和高于17 dB的隔离。此外,我们还探索了一些技术,例如减少探测垫和串联分流配置,以将隔离度提高到30 dB以上。得益于四组配置,阈值电压从5 V增加到13.5 V,可预测功率处理高于35 dBm。
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Asymmetric and Symmetric Single-Pole Double-Throw With Improved Power Handling Using Indirectly Heated Phase-Change Switches
Four-terminal indirectly heated phase-change switches (IPCSs) have emerged as excellent candidates for radio-frequency integrated circuit (RFIC) applications due to their state-of-the-art cutoff frequency, nonvolatility, CMOS compatibility, and exceptional linearity. However, IPCS performance is limited by relatively low-power handling capabilities in the off-state, limited by the Ovonic threshold switching (OTS) phenomenon. In this article, we propose the use of a quad configuration consisting of two series-connected IPCS in parallel with another two series-connected IPCS. This series connection increases the effective threshold voltage, thereby enhancing power handling compared to a single device. We experimentally demonstrate the implementation of this quad configuration in asymmetric and symmetric single-pole double-throw (SPDT) switches. Fabricated using an in-house process, these designs achieve an insertion loss (IL) below 0.8 dB and isolation higher than 17 dB within the dc-15 GHz frequency band. Furthermore, we explore techniques, such as reducing the probing pads and series-shunt configuration, to boost isolation beyond 30 dB. Thanks to the quad configuration, the threshold voltage increases from 5 to 13.5 V, predicatively enabling power handling above 35 dBm.
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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