Zhiqiang Tian;Gang Zhang;Yuhua Huang;Shizhao Wang;Sheng Liu
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Process Mechanics Model and Asymmetric Residual Stress Analysis During 3-D NAND Manufacturing
The advent of 3-D NAND architecture has introduced new integration challenges, particularly regarding the impact of thermal-mechanical stress during manufacturing, which significantly affects device performance. This study establishes a 3-D NAND flash memory process mechanics model using a local representative volume element (RVE) finite element modeling framework. We thoroughly analyze the causes of warpage during the 3-D NAND manufacturing process and monitor the evolution of mechanical stress and related structural deformations. Additionally, we examine the deformation distribution under sequential processes and investigate how different process conditions impact asymmetric deformation. Our findings have potential significance for improving device structure reliability and optimizing process parameters in 3-D NAND memory manufacturing. By providing insights into stress evolution and deformation mechanisms, this work contributes to addressing the challenges associated with increasing storage density in 3-D NAND technology.
期刊介绍:
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.