三维NAND加工过程力学模型及非对称残余应力分析

IF 2.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Electron Devices Pub Date : 2024-11-27 DOI:10.1109/TED.2024.3496435
Zhiqiang Tian;Gang Zhang;Yuhua Huang;Shizhao Wang;Sheng Liu
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引用次数: 0

摘要

3-D NAND架构的出现带来了新的集成挑战,特别是在制造过程中的热机械应力影响方面,这极大地影响了器件的性能。本研究采用局部代表性体积元(RVE)有限元建模框架,建立了三维NAND闪存过程力学模型。我们深入分析了三维NAND制造过程中翘曲的原因,并监测了机械应力和相关结构变形的演变。此外,我们研究了顺序过程下的变形分布,并研究了不同的工艺条件如何影响不对称变形。研究结果对提高器件结构可靠性和优化3d NAND存储器制造工艺参数具有潜在意义。通过深入了解应力演化和变形机制,这项工作有助于解决与3d NAND技术中存储密度增加相关的挑战。
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Process Mechanics Model and Asymmetric Residual Stress Analysis During 3-D NAND Manufacturing
The advent of 3-D NAND architecture has introduced new integration challenges, particularly regarding the impact of thermal-mechanical stress during manufacturing, which significantly affects device performance. This study establishes a 3-D NAND flash memory process mechanics model using a local representative volume element (RVE) finite element modeling framework. We thoroughly analyze the causes of warpage during the 3-D NAND manufacturing process and monitor the evolution of mechanical stress and related structural deformations. Additionally, we examine the deformation distribution under sequential processes and investigate how different process conditions impact asymmetric deformation. Our findings have potential significance for improving device structure reliability and optimizing process parameters in 3-D NAND memory manufacturing. By providing insights into stress evolution and deformation mechanisms, this work contributes to addressing the challenges associated with increasing storage density in 3-D NAND technology.
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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