嵌入Al₂O₃夹层的多态超低功率铁电隧道结

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Electron Devices Pub Date : 2024-12-05 DOI:10.1109/TED.2024.3503533

Yefan Zhang;Shihao Yu;Peng Yang;Xiaopeng Luo;Hui Xu;Xi Wang;Haijun Liu;Sen Liu;Qingjiang Li

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引用次数: 0

摘要

在本文中，我们设计了一种优化的铁电隧道结（FTJ）器件结构，该结构在Hf0.5Zr0.5O2 （HZO）薄膜之间插入3nm的Al2O3。Al2O3中间层阻断了HZO晶粒的纵向生长，增加了铁电畴的数量。因此，具有Al2O3中间层的FTJ器件表现出惊人的多能级状态（256）和超低的计算功耗（76.1 pW/bit）。此外，所提出的FTJ器件具有高线性度（$\alpha _{\text {p}} = -1.262$）、宽调制能力和良好的再现性。结果表明，该器件在高效能类脑计算应用中具有很高的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Multistates and Ultralow-Power Ferroelectric Tunnel Junction by Inserting Al₂O₃ Interlayer

In this article, we have designed an optimized ferroelectric tunnel junction (FTJ) device structure that inserts 3-nm Al2O3 between Hf0.5Zr0.5O2 (HZO) films. The Al2O3 interlayer can block the longitudinal growth of HZO grains and increase the number of ferroelectric domains. Therefore, the FTJ devices with Al2O3 interlayer demonstrate amazing multilevel states (256) and ultralow computational power consumption (76.1 pW/bit). In addition, the proposed FTJ device shows high linearity (

$\alpha _{\text {p}} = -1.262$

), wide modulation capability, and good reproducibility. The results indicate that the device has high potential in energy-efficient brain-like computing application.

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.