基于级联逆变器的1.48 fm模拟无电容ldo

IF 2.2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE IEEE Solid-State Circuits Letters Pub Date : 2024-12-25 DOI:10.1109/LSSC.2024.3522785
Hing Tai Chen;Xun Liu;Ka Nang Leung
{"title":"基于级联逆变器的1.48 fm模拟无电容ldo","authors":"Hing Tai Chen;Xun Liu;Ka Nang Leung","doi":"10.1109/LSSC.2024.3522785","DOIUrl":null,"url":null,"abstract":"A capacitorless analog low-dropout regulator (CL-LDO) with cascade-inverter-based pseudo-power transistor is presented in this letter. The proposed architecture supports ultralow-voltage operation, fast transient response, high current efficiency, and high loop gain with low quiescent current along the full load range. The proposed CL-LDO can be easily implemented without any external transient-enhancement circuit. The circuit is fabricated in a 65-nm LP CMOS process with an active area of 0.00782 mm2. The minimum supply voltage can be as low as 0.5 V. The minimum dropout voltage is 20 mV. Under a 1-V supply, the undershoot voltage with 100-mV dropout voltage is 87 mV and settles down within 10 ns when the load current increases from \n<inline-formula> <tex-math>$100~\\boldsymbol {\\mu }$ </tex-math></inline-formula>\n A to 50 mA within 5-ns edge time. The measured quiescent current is \n<inline-formula> <tex-math>$4~\\boldsymbol {\\mu }$ </tex-math></inline-formula>\n A. The transient figure of merit is 1.48 fs.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":"8 ","pages":"25-28"},"PeriodicalIF":2.2000,"publicationDate":"2024-12-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 1.48-fs FoM Analog Capacitorless-LDO With Cascade-Inverter-Based Pseudo-Power Transistor\",\"authors\":\"Hing Tai Chen;Xun Liu;Ka Nang Leung\",\"doi\":\"10.1109/LSSC.2024.3522785\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A capacitorless analog low-dropout regulator (CL-LDO) with cascade-inverter-based pseudo-power transistor is presented in this letter. The proposed architecture supports ultralow-voltage operation, fast transient response, high current efficiency, and high loop gain with low quiescent current along the full load range. The proposed CL-LDO can be easily implemented without any external transient-enhancement circuit. The circuit is fabricated in a 65-nm LP CMOS process with an active area of 0.00782 mm2. The minimum supply voltage can be as low as 0.5 V. The minimum dropout voltage is 20 mV. Under a 1-V supply, the undershoot voltage with 100-mV dropout voltage is 87 mV and settles down within 10 ns when the load current increases from \\n<inline-formula> <tex-math>$100~\\\\boldsymbol {\\\\mu }$ </tex-math></inline-formula>\\n A to 50 mA within 5-ns edge time. The measured quiescent current is \\n<inline-formula> <tex-math>$4~\\\\boldsymbol {\\\\mu }$ </tex-math></inline-formula>\\n A. The transient figure of merit is 1.48 fs.\",\"PeriodicalId\":13032,\"journal\":{\"name\":\"IEEE Solid-State Circuits Letters\",\"volume\":\"8 \",\"pages\":\"25-28\"},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2024-12-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Solid-State Circuits Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10815978/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Solid-State Circuits Letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10815978/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
引用次数: 0

摘要

本文介绍了一种基于级联逆变器的伪功率晶体管的无电容模拟低压差稳压器(CL-LDO)。该架构支持超低电压工作、快速瞬态响应、高电流效率以及在全负载范围内具有低静态电流的高环路增益。所提出的CL-LDO无需任何外部瞬态增强电路即可轻松实现。该电路采用65纳米LP CMOS工艺制造,有效面积为0.00782 mm2。最小供电电压可低至0.5 V。最小压降电压为20mv。在1 v电源下,当负载电流从$100~\boldsymbol {\mu}$ a在5ns边缘时间内增加到50 mA时,降压为100 mV的欠冲电压为87 mV,在10ns内稳定下来。测量到的静态电流为$4~\boldsymbol {\mu}$ a,暂态优值为1.48 fs。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
A 1.48-fs FoM Analog Capacitorless-LDO With Cascade-Inverter-Based Pseudo-Power Transistor
A capacitorless analog low-dropout regulator (CL-LDO) with cascade-inverter-based pseudo-power transistor is presented in this letter. The proposed architecture supports ultralow-voltage operation, fast transient response, high current efficiency, and high loop gain with low quiescent current along the full load range. The proposed CL-LDO can be easily implemented without any external transient-enhancement circuit. The circuit is fabricated in a 65-nm LP CMOS process with an active area of 0.00782 mm2. The minimum supply voltage can be as low as 0.5 V. The minimum dropout voltage is 20 mV. Under a 1-V supply, the undershoot voltage with 100-mV dropout voltage is 87 mV and settles down within 10 ns when the load current increases from $100~\boldsymbol {\mu }$ A to 50 mA within 5-ns edge time. The measured quiescent current is $4~\boldsymbol {\mu }$ A. The transient figure of merit is 1.48 fs.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
IEEE Solid-State Circuits Letters
IEEE Solid-State Circuits Letters Engineering-Electrical and Electronic Engineering
CiteScore
4.30
自引率
3.70%
发文量
52
期刊最新文献
A 1.54 pJ/b 80 Gb/s D-Band 2-D Scalable Transceiver Array With On-Chip Antennas in 28-nm Bulk CMOS A 0.86 mW 17 fA/√Hz, 129-dB DR Current-Sensing Front-End for Under-Display Ambient Light Sensor With Zero-Compensated Logarithmic TIA 20–26-GHz CMOS PA With High Pout and OP1 dB Using a 1:2 Capacitance-Ratio-Equivalent Power Combiner A Low-Jitter Fractional-N LC-PLL With a 1/4 DTC-Range-Reduction Technique A 23–28-GHz Doherty Power Amplifier With a PVT Insensitive Power Detection for Adaptive Biasing
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1