利用超导邻近效应在双拓扑绝缘体BiSe中产生p波超导性

IF 8.3 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY ACS Applied Materials & Interfaces Pub Date : 2025-01-21 DOI:10.1021/acsami.4c15770
Gagan Rastogi, Abhinab Mohapatra, Rajamanickam Ganesan, P. S. Anil Kumar
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引用次数: 0

摘要

由于各向异性超导体在量子计算中的潜在应用,对它们的追求一直是一个长期的追求。在这方面,实验上主要观察到d波和各向异性s波超导序参量,而p波超导在很大程度上仍然难以捉摸。在拓扑相中实现p波超导性是非常理想的,因为它被认为适合创建拓扑保护量子比特。为了在双拓扑绝缘体BiSe中实现拓扑超导性,我们采用范德华外延技术将s波超导体NbSe2放置在其附近。在异质结处进行的低温差分电导测量显示出具有v形内倾角的双倾角特征,这是p波超导的特征。多波段二维Blonder-Tinkham-Klapwijk (BTK)拟合证实了这一观察结果,其中内部和外部间隙分别表现为p波和s波特征。此外,BTK分析表明,两个超导隙具有不同的有效临界场和转变温度。
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Emergent p-Wave Superconductivity in a Dual Topological Insulator BiSe via Superconducting Proximity Effect
The quest for anisotropic superconductors has been a long-standing pursuit due to their potential applications in quantum computing. In this regard, experimentally, d-wave and anisotropic s-wave superconducting order parameters are predominantly observed, while p-wave superconductors remain largely elusive. Achieving p-wave superconductivity in topological phases is highly desirable, as it is considered suitable for creating topologically protected qubits. To achieve topological superconductivity in the dual topological insulator BiSe, we place an s-wave superconductor NbSe2 in its close proximity employing the van der Waals epitaxy technique. Low-temperature differential conductance measurements performed at the heterojunction exhibit a dual-dip feature with a V-shaped inner dip, a characteristic of p-wave superconductivity. This observation is corroborated by the multiband 2D Blonder–Tinkham–Klapwijk (BTK) fitting, where the inner and outer gaps exhibit p-wave and s-wave character, respectively. Furthermore, the BTK analysis reveals that the two superconducting gaps experience distinct effective critical fields and transition temperatures.
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来源期刊
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces 工程技术-材料科学:综合
CiteScore
16.00
自引率
6.30%
发文量
4978
审稿时长
1.8 months
期刊介绍: ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.
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