Ju-Won Yeon;Hyo-Jun Park;Eui-Cheol Yun;Moon-Kwon Lee;Tae-Hyun Kil;Yong-Sik Kim;Jun-Young Park
{"title":"300℃氘退火改善SiO2薄膜表面粗糙度的研究","authors":"Ju-Won Yeon;Hyo-Jun Park;Eui-Cheol Yun;Moon-Kwon Lee;Tae-Hyun Kil;Yong-Sik Kim;Jun-Young Park","doi":"10.1109/TNANO.2024.3524567","DOIUrl":null,"url":null,"abstract":"Recently, deuterium annealing at a reduced temperature range of 300 °C has been proposed to enhance SiO<sub>2</sub> gate dielectrics and the Si/SiO<sub>2</sub> interface, thereby improving device reliability. As a further investigation into deuterium annealing, for the first time this study compared deuterium absorption characteristics with various SiO<sub>2</sub> dielectrics formed by wet oxidation, dry oxidation, low-pressure chemical vapor deposition (LPCVD), and plasma-enhanced chemical vapor deposition (PECVD). Deuterium annealing can also be used to reduce the roughness and improve the uniformity of SiO<sub>2</sub> dielectric films. Surface roughness of various samples was measured and quantitatively compared using atomic force microscopy (AFM) after deuterium annealing.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"54-58"},"PeriodicalIF":2.1000,"publicationDate":"2024-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Improvement of Surface Roughness in SiO2 Thin Films via Deuterium Annealing at 300 °C\",\"authors\":\"Ju-Won Yeon;Hyo-Jun Park;Eui-Cheol Yun;Moon-Kwon Lee;Tae-Hyun Kil;Yong-Sik Kim;Jun-Young Park\",\"doi\":\"10.1109/TNANO.2024.3524567\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Recently, deuterium annealing at a reduced temperature range of 300 °C has been proposed to enhance SiO<sub>2</sub> gate dielectrics and the Si/SiO<sub>2</sub> interface, thereby improving device reliability. As a further investigation into deuterium annealing, for the first time this study compared deuterium absorption characteristics with various SiO<sub>2</sub> dielectrics formed by wet oxidation, dry oxidation, low-pressure chemical vapor deposition (LPCVD), and plasma-enhanced chemical vapor deposition (PECVD). Deuterium annealing can also be used to reduce the roughness and improve the uniformity of SiO<sub>2</sub> dielectric films. Surface roughness of various samples was measured and quantitatively compared using atomic force microscopy (AFM) after deuterium annealing.\",\"PeriodicalId\":449,\"journal\":{\"name\":\"IEEE Transactions on Nanotechnology\",\"volume\":\"24 \",\"pages\":\"54-58\"},\"PeriodicalIF\":2.1000,\"publicationDate\":\"2024-12-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Nanotechnology\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10819286/\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Nanotechnology","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10819286/","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Improvement of Surface Roughness in SiO2 Thin Films via Deuterium Annealing at 300 °C
Recently, deuterium annealing at a reduced temperature range of 300 °C has been proposed to enhance SiO2 gate dielectrics and the Si/SiO2 interface, thereby improving device reliability. As a further investigation into deuterium annealing, for the first time this study compared deuterium absorption characteristics with various SiO2 dielectrics formed by wet oxidation, dry oxidation, low-pressure chemical vapor deposition (LPCVD), and plasma-enhanced chemical vapor deposition (PECVD). Deuterium annealing can also be used to reduce the roughness and improve the uniformity of SiO2 dielectric films. Surface roughness of various samples was measured and quantitatively compared using atomic force microscopy (AFM) after deuterium annealing.
期刊介绍：
The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
