Temperature dependence of analog/RF performance, linearity and harmonic distortion figures of merit in negative capacitance quad-FinFET

This paper presents an investigation on the impact of temperature variations (150 –400 K) on the DC, analog/RF performance such as total gate capacitance (C_gg), transconductance (g_m), output conductance (g_d), intrinsic gain, transconductance efficiency, cut-off frequency (f_T), and transconductance frequency product (TFP) of the negative capacitance quad-FinFET (NCQ-FinFET). A comparative evaluation of the analog/RF performance of the NCQ-FinFET and SOI NC-FinFET is carried out. Additionally, the influence of temperature on the linearity figures of merit in the NCQ-FinFET is analysed for a wide range of temperature, including higher order harmonics, higher order voltage intercept points, third-orders power-intercept points and intermodulation distortion, and 1-dB compression point. Furthermore, the harmonic distortion (HD) metrics such as second and third order harmonic distortion (HD2 and HD3), as well as total harmonic distortion (THD) are presented for different temperature range. The analog/RF, linearity and HD metrics are observed to be significantly impacted by temperature variation. According to the analysis, when temperature increases from 150 K to 400 K, the analog/RF characteristics deteriorates while the linearity and HD metrics are improved.