Photo-thermal coupling effects on carrier transfer and barrier height in ZnO nanowires

Manipulating carrier redistribution in piezoelectric semiconductors via piezo- and thermo-photonic effects offering a promising approach for developing tunable optoelectronic devices. In this paper, we present a combined theoretical analysis and photoelectric bridge experiments to characterize and modulate electron transport in a single ZnO nanowire device with two identical electrodes by varying the intensity of ultraviolet light. Additionally, we have developed a comprehensive photo-thermal coupling model that integrates photoexcitation, photothermal and secondary pyroelectric (or thermal strain) effects. This model enables the extraction of carrier concentration and barrier height from the current-voltage curves through parameter inversion. Our findings provide deep insights into the electrical characteristics of nanodevices under bias control and open new avenues for the design of innovative electronic and optoelectronic nanodevices.