Hong Yan, Zhaoting Zhang, Jiaxin Lü, Jijun Yun, Shuanhu Wang, Kexin Jin
{"title":"LaAlO3/TiO2双层界面生成二维电子气体的输运性质","authors":"Hong Yan, Zhaoting Zhang, Jiaxin Lü, Jijun Yun, Shuanhu Wang, Kexin Jin","doi":"10.1016/j.scriptamat.2024.116512","DOIUrl":null,"url":null,"abstract":"<div><div>The two-dimensional electron gas (2DEG) at oxide heterointerface is particularly interesting for achieving abundant exotic physical properties. Herein, we report a 2DEG generated at the interfaces of amorphous-LaAlO<sub>3</sub>/TiO<sub>2</sub> (<em>a</em>-LAO/TiO<sub>2</sub>) thin film heterostructures. Highly metallic interfaces are obtained for heterostructures with <em>a</em>-LAO and TiO<sub>2</sub> layers that reach 2 nm and 5 nm, respectively. A high carrier density of ∼10<sup>14</sup> cm<sup>-2</sup> and low mobility of ∼10 cm<sup>2</sup>V<sup>-1</sup>s<sup>-1</sup> were achieved. Also, unique negative magnetoresistance is detected in the 2DEG, arising from the weak localization mechanism. The discovery creates a new path to exploring the physics of low-dimensional oxide electronics and facilitates the integration of 2DEG with functional materials for multilayer interfaces.</div></div>","PeriodicalId":423,"journal":{"name":"Scripta Materialia","volume":"258 ","pages":"Article 116512"},"PeriodicalIF":5.6000,"publicationDate":"2025-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Transport properties of two-dimensional electron gas generated at LaAlO3/TiO2 bilayer interfaces\",\"authors\":\"Hong Yan, Zhaoting Zhang, Jiaxin Lü, Jijun Yun, Shuanhu Wang, Kexin Jin\",\"doi\":\"10.1016/j.scriptamat.2024.116512\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>The two-dimensional electron gas (2DEG) at oxide heterointerface is particularly interesting for achieving abundant exotic physical properties. Herein, we report a 2DEG generated at the interfaces of amorphous-LaAlO<sub>3</sub>/TiO<sub>2</sub> (<em>a</em>-LAO/TiO<sub>2</sub>) thin film heterostructures. Highly metallic interfaces are obtained for heterostructures with <em>a</em>-LAO and TiO<sub>2</sub> layers that reach 2 nm and 5 nm, respectively. A high carrier density of ∼10<sup>14</sup> cm<sup>-2</sup> and low mobility of ∼10 cm<sup>2</sup>V<sup>-1</sup>s<sup>-1</sup> were achieved. Also, unique negative magnetoresistance is detected in the 2DEG, arising from the weak localization mechanism. The discovery creates a new path to exploring the physics of low-dimensional oxide electronics and facilitates the integration of 2DEG with functional materials for multilayer interfaces.</div></div>\",\"PeriodicalId\":423,\"journal\":{\"name\":\"Scripta Materialia\",\"volume\":\"258 \",\"pages\":\"Article 116512\"},\"PeriodicalIF\":5.6000,\"publicationDate\":\"2025-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Scripta Materialia\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1359646224005451\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"2024/12/15 0:00:00\",\"PubModel\":\"Epub\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Scripta Materialia","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1359646224005451","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2024/12/15 0:00:00","PubModel":"Epub","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Transport properties of two-dimensional electron gas generated at LaAlO3/TiO2 bilayer interfaces
The two-dimensional electron gas (2DEG) at oxide heterointerface is particularly interesting for achieving abundant exotic physical properties. Herein, we report a 2DEG generated at the interfaces of amorphous-LaAlO3/TiO2 (a-LAO/TiO2) thin film heterostructures. Highly metallic interfaces are obtained for heterostructures with a-LAO and TiO2 layers that reach 2 nm and 5 nm, respectively. A high carrier density of ∼1014 cm-2 and low mobility of ∼10 cm2V-1s-1 were achieved. Also, unique negative magnetoresistance is detected in the 2DEG, arising from the weak localization mechanism. The discovery creates a new path to exploring the physics of low-dimensional oxide electronics and facilitates the integration of 2DEG with functional materials for multilayer interfaces.
期刊介绍：
Scripta Materialia is a LETTERS journal of Acta Materialia, providing a forum for the rapid publication of short communications on the relationship between the structure and the properties of inorganic materials. The emphasis is on originality rather than incremental research. Short reports on the development of materials with novel or substantially improved properties are also welcomed. Emphasis is on either the functional or mechanical behavior of metals, ceramics and semiconductors at all length scales.
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