Ag3Al/Ag界面的取向关系及Ag2Al和Ag3Al在Ag/Al界面的形成顺序

IF 2 4区 材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS Thin Solid Films Pub Date : 2025-01-15 Epub Date: 2024-12-30 DOI:10.1016/j.tsf.2024.140598
Kuang-Kuo Wang, Dershin Gan
{"title":"Ag3Al/Ag界面的取向关系及Ag2Al和Ag3Al在Ag/Al界面的形成顺序","authors":"Kuang-Kuo Wang,&nbsp;Dershin Gan","doi":"10.1016/j.tsf.2024.140598","DOIUrl":null,"url":null,"abstract":"<div><div>The silver-aluminum interface reaction has continued to attract significant interest in recent years, particularly with the development of silver and silver alloy wires for advanced wire bonding techniques. The purpose of this study is to investigate the orientation relationships and interface between mu (μ)-Ag<sub>3</sub>Al and Ag, as well as formation sequence of gamma (γ)-Ag<sub>2</sub>Al and μ-Ag<sub>3</sub>Al at the Ag/Al interface. The orientation relationships and interfaces between μ-Ag<sub>3</sub>Al and Ag have been studied by transmission electron microscopy (TEM). Epitaxial (001)<sub>Ag</sub> thin films was grown on the NaCl (001) surface and then Al was evaporated onto the Ag film form μ-Ag<sub>3</sub>Al. Results showed that the γ-Ag<sub>2</sub>Al first formed at Ag/Al interface and then the μ-Ag<sub>3</sub>Al formed after annealing at 350 °C for 5 min. The orientation relationships were found: (1) [221]<sub>μ</sub>//[001]<sub>Ag</sub> (zone axis), <span><math><mrow><mo>(</mo><mrow><mover><mn>1</mn><mo>¯</mo></mover><mn>10</mn></mrow><mo>)</mo></mrow></math></span><sub>μ</sub>//(110)<sub>Ag</sub>, and <span><math><mrow><mo>(</mo><mrow><mn>11</mn><mover><mn>4</mn><mo>¯</mo></mover></mrow><mo>)</mo></mrow></math></span><sub>μ</sub>//<span><math><mrow><mo>(</mo><mrow><mover><mn>1</mn><mo>¯</mo></mover><mn>10</mn></mrow><mo>)</mo></mrow></math></span><sub>Ag</sub> at γ-Ag<sub>2</sub>Al/Ag interface and (2) [0001]<sub>γ</sub>//[221]<sub>μ</sub> (zone axis), <span><math><mrow><mo>(</mo><mrow><mover><mn>1</mn><mo>¯</mo></mover><mn>100</mn></mrow><mo>)</mo></mrow></math></span><sub>γ</sub>//<span><math><mrow><mo>(</mo><mrow><mn>1</mn><mover><mn>1</mn><mo>¯</mo></mover><mn>0</mn></mrow><mo>)</mo></mrow></math></span><sub>μ</sub>, and <span><math><mrow><mo>(</mo><mrow><mover><mn>1</mn><mo>¯</mo></mover><mover><mn>1</mn><mo>¯</mo></mover><mn>20</mn></mrow><mo>)</mo></mrow></math></span><sub>γ</sub>//<span><math><mrow><mo>(</mo><mrow><mn>11</mn><mover><mn>4</mn><mo>¯</mo></mover></mrow><mo>)</mo></mrow></math></span><sub>μ</sub> at Ag/Al interface. The μ/Ag and γ/μ interfaces were further analyzed by the surface structures and the orientation relationships.</div><div>That γ-Ag<sub>2</sub>Al forms before μ-Ag<sub>3</sub>Al in the solid-state Ag/Al interfacial reactions was discussed by heterogeneous nucleation theory. Analysis of the interfaces showed that the γ-Ag<sub>2</sub>Al/Ag interfacial energies with better interfacial coherency were lower than those that of the μ-Ag<sub>3</sub>Al/Ag. In addition, the energy of formation of γ-Ag<sub>2</sub>Al is slightly larger than that of μ-Ag<sub>3</sub>Al. Therefore γ-Ag<sub>2</sub>Al forms before μ-Ag<sub>3</sub>Al.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"810 ","pages":"Article 140598"},"PeriodicalIF":2.0000,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The orientation relationships of Ag3Al/Ag interfaces and formation sequence of Ag2Al and Ag3Al at the Ag/Al interface\",\"authors\":\"Kuang-Kuo Wang,&nbsp;Dershin Gan\",\"doi\":\"10.1016/j.tsf.2024.140598\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>The silver-aluminum interface reaction has continued to attract significant interest in recent years, particularly with the development of silver and silver alloy wires for advanced wire bonding techniques. The purpose of this study is to investigate the orientation relationships and interface between mu (μ)-Ag<sub>3</sub>Al and Ag, as well as formation sequence of gamma (γ)-Ag<sub>2</sub>Al and μ-Ag<sub>3</sub>Al at the Ag/Al interface. The orientation relationships and interfaces between μ-Ag<sub>3</sub>Al and Ag have been studied by transmission electron microscopy (TEM). Epitaxial (001)<sub>Ag</sub> thin films was grown on the NaCl (001) surface and then Al was evaporated onto the Ag film form μ-Ag<sub>3</sub>Al. Results showed that the γ-Ag<sub>2</sub>Al first formed at Ag/Al interface and then the μ-Ag<sub>3</sub>Al formed after annealing at 350 °C for 5 min. The orientation relationships were found: (1) [221]<sub>μ</sub>//[001]<sub>Ag</sub> (zone axis), <span><math><mrow><mo>(</mo><mrow><mover><mn>1</mn><mo>¯</mo></mover><mn>10</mn></mrow><mo>)</mo></mrow></math></span><sub>μ</sub>//(110)<sub>Ag</sub>, and <span><math><mrow><mo>(</mo><mrow><mn>11</mn><mover><mn>4</mn><mo>¯</mo></mover></mrow><mo>)</mo></mrow></math></span><sub>μ</sub>//<span><math><mrow><mo>(</mo><mrow><mover><mn>1</mn><mo>¯</mo></mover><mn>10</mn></mrow><mo>)</mo></mrow></math></span><sub>Ag</sub> at γ-Ag<sub>2</sub>Al/Ag interface and (2) [0001]<sub>γ</sub>//[221]<sub>μ</sub> (zone axis), <span><math><mrow><mo>(</mo><mrow><mover><mn>1</mn><mo>¯</mo></mover><mn>100</mn></mrow><mo>)</mo></mrow></math></span><sub>γ</sub>//<span><math><mrow><mo>(</mo><mrow><mn>1</mn><mover><mn>1</mn><mo>¯</mo></mover><mn>0</mn></mrow><mo>)</mo></mrow></math></span><sub>μ</sub>, and <span><math><mrow><mo>(</mo><mrow><mover><mn>1</mn><mo>¯</mo></mover><mover><mn>1</mn><mo>¯</mo></mover><mn>20</mn></mrow><mo>)</mo></mrow></math></span><sub>γ</sub>//<span><math><mrow><mo>(</mo><mrow><mn>11</mn><mover><mn>4</mn><mo>¯</mo></mover></mrow><mo>)</mo></mrow></math></span><sub>μ</sub> at Ag/Al interface. The μ/Ag and γ/μ interfaces were further analyzed by the surface structures and the orientation relationships.</div><div>That γ-Ag<sub>2</sub>Al forms before μ-Ag<sub>3</sub>Al in the solid-state Ag/Al interfacial reactions was discussed by heterogeneous nucleation theory. Analysis of the interfaces showed that the γ-Ag<sub>2</sub>Al/Ag interfacial energies with better interfacial coherency were lower than those that of the μ-Ag<sub>3</sub>Al/Ag. In addition, the energy of formation of γ-Ag<sub>2</sub>Al is slightly larger than that of μ-Ag<sub>3</sub>Al. Therefore γ-Ag<sub>2</sub>Al forms before μ-Ag<sub>3</sub>Al.</div></div>\",\"PeriodicalId\":23182,\"journal\":{\"name\":\"Thin Solid Films\",\"volume\":\"810 \",\"pages\":\"Article 140598\"},\"PeriodicalIF\":2.0000,\"publicationDate\":\"2025-01-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Thin Solid Films\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0040609024003997\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"2024/12/30 0:00:00\",\"PubModel\":\"Epub\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, COATINGS & FILMS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Thin Solid Films","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0040609024003997","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2024/12/30 0:00:00","PubModel":"Epub","JCR":"Q3","JCRName":"MATERIALS SCIENCE, COATINGS & FILMS","Score":null,"Total":0}
引用次数: 0

摘要

近年来,银铝界面反应继续引起人们的极大兴趣,特别是随着用于先进金属键合技术的银和银合金线的发展。本研究的目的是研究mu (μ)-Ag3Al与Ag的取向关系和界面,以及γ (γ)-Ag2Al和μ-Ag3Al在Ag/Al界面上的形成顺序。用透射电镜(TEM)研究了μ-Ag3Al与Ag之间的取向关系和界面。在NaCl(001)表面生长外延(001)Ag薄膜,然后将Al以μ-Ag3Al的形式蒸发到Ag薄膜上。结果表明:γ- ag2al首先在Ag/Al界面形成,然后在350℃退火5 min后形成μ- ag3al,取向关系为:(1)γ- ag2al /Ag界面处的[221]μ//[001]Ag(区轴)、(1¯10)μ//(110)Ag和(114¯)μ//(1¯10)Ag和(2)[0001]γ//[221]μ(区轴)、(1¯100)γ//(11¯0)μ和(1¯1¯20)γ//(114¯)μ。进一步分析了μ/Ag和γ/μ界面的表面结构和取向关系。用非均相成核理论讨论了固态Ag/Al界面反应中γ-Ag2Al先于μ-Ag3Al形成。界面分析表明,界面相干性较好的γ-Ag2Al/Ag的界面能低于μ-Ag3Al/Ag的界面能。γ-Ag2Al的生成能略大于μ-Ag3Al的生成能。因此γ-Ag2Al先于μ-Ag3Al形成。
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The orientation relationships of Ag3Al/Ag interfaces and formation sequence of Ag2Al and Ag3Al at the Ag/Al interface
The silver-aluminum interface reaction has continued to attract significant interest in recent years, particularly with the development of silver and silver alloy wires for advanced wire bonding techniques. The purpose of this study is to investigate the orientation relationships and interface between mu (μ)-Ag3Al and Ag, as well as formation sequence of gamma (γ)-Ag2Al and μ-Ag3Al at the Ag/Al interface. The orientation relationships and interfaces between μ-Ag3Al and Ag have been studied by transmission electron microscopy (TEM). Epitaxial (001)Ag thin films was grown on the NaCl (001) surface and then Al was evaporated onto the Ag film form μ-Ag3Al. Results showed that the γ-Ag2Al first formed at Ag/Al interface and then the μ-Ag3Al formed after annealing at 350 °C for 5 min. The orientation relationships were found: (1) [221]μ//[001]Ag (zone axis), (1¯10)μ//(110)Ag, and (114¯)μ//(1¯10)Ag at γ-Ag2Al/Ag interface and (2) [0001]γ//[221]μ (zone axis), (1¯100)γ//(11¯0)μ, and (1¯1¯20)γ//(114¯)μ at Ag/Al interface. The μ/Ag and γ/μ interfaces were further analyzed by the surface structures and the orientation relationships.
That γ-Ag2Al forms before μ-Ag3Al in the solid-state Ag/Al interfacial reactions was discussed by heterogeneous nucleation theory. Analysis of the interfaces showed that the γ-Ag2Al/Ag interfacial energies with better interfacial coherency were lower than those that of the μ-Ag3Al/Ag. In addition, the energy of formation of γ-Ag2Al is slightly larger than that of μ-Ag3Al. Therefore γ-Ag2Al forms before μ-Ag3Al.
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来源期刊
Thin Solid Films
Thin Solid Films 工程技术-材料科学:膜
CiteScore
4.00
自引率
4.80%
发文量
381
审稿时长
7.5 months
期刊介绍: Thin Solid Films is an international journal which serves scientists and engineers working in the fields of thin-film synthesis, characterization, and applications. The field of thin films, which can be defined as the confluence of materials science, surface science, and applied physics, has become an identifiable unified discipline of scientific endeavor.
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