控制区域规则的轻掺杂半导体聚合物结构演化与电荷输运的关系

IF 4.6 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Synthetic Metals Pub Date : 2025-04-01 Epub Date: 2024-12-02 DOI:10.1016/j.synthmet.2024.117810
Jisoo Kim , Sehyeon Kim , Min-Jae Kim , Boseok Kang , Hoichang Yang
{"title":"控制区域规则的轻掺杂半导体聚合物结构演化与电荷输运的关系","authors":"Jisoo Kim ,&nbsp;Sehyeon Kim ,&nbsp;Min-Jae Kim ,&nbsp;Boseok Kang ,&nbsp;Hoichang Yang","doi":"10.1016/j.synthmet.2024.117810","DOIUrl":null,"url":null,"abstract":"<div><div>As an element of organic thin-film transistors, lightly doped conjugated polymers without high off-state electrical conductivities have received considerable attention. In this study, the impact of dopant loading in a benchmark semiconducting polymer, poly(3-hexyl thiophene) (P3HT), with controlled regioregularity was systemically investigated in view of structural evolution and change in optoelectronic properties, especially in relation to transistor performance. P3HTs doped with the p-type molecular dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F<sub>4</sub>TCNQ) exhibited distinct nanostructures as the molar dopant ratio (MDR, [F<sub>4</sub>TCNQ]/[hexylthiophene]) increased. The nucleation and crystal growth of 97 % regioregular P3HT were greatly enhanced by blending with F<sub>4</sub>TCNQ at low-level MDRs (≤ 0.015). At MDR = 0.015, the doped P3HT film exhibiting highly ordered conjugated nanodomains yielded a superior field-effect mobility of up to 0.10 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup>, considerably higher than the undoped P3HT (∼10<sup>−3</sup> cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup>). At relatively higher doping levels (MDR ≥ 0.05), the doped P3HT films showed large size aggregates with less long range order and resulted in poor transistor performances, while their electrical conductivities gradually increased as the MDR increased. Similarly, a regiorandom P3HT with 55 % regioregularity showed aggregated nanostructures as F<sub>4</sub>TCNQ was loaded, but their electrical properties were far inferior to regioregular P3HTs in the overall MDR ranges (0.005 – 0.5). Also, a diketopyrrolopyrrole-based p-type donor-acceptor copolymer was found to exhibit the <em>µ</em><sub>FET</sub> improvement upon light doping, like the <em>µ</em><sub>FET</sub> trends in rr-P3HT and rra-P3HT. These findings would provide valuable insights into the development of various electronic applications with doped conjugated polymers.</div></div>","PeriodicalId":22245,"journal":{"name":"Synthetic Metals","volume":"311 ","pages":"Article 117810"},"PeriodicalIF":4.6000,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Correlating the structural evolution and charge transport in lightly doped semiconducting polymers of controlled regioregularity\",\"authors\":\"Jisoo Kim ,&nbsp;Sehyeon Kim ,&nbsp;Min-Jae Kim ,&nbsp;Boseok Kang ,&nbsp;Hoichang Yang\",\"doi\":\"10.1016/j.synthmet.2024.117810\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>As an element of organic thin-film transistors, lightly doped conjugated polymers without high off-state electrical conductivities have received considerable attention. In this study, the impact of dopant loading in a benchmark semiconducting polymer, poly(3-hexyl thiophene) (P3HT), with controlled regioregularity was systemically investigated in view of structural evolution and change in optoelectronic properties, especially in relation to transistor performance. P3HTs doped with the p-type molecular dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F<sub>4</sub>TCNQ) exhibited distinct nanostructures as the molar dopant ratio (MDR, [F<sub>4</sub>TCNQ]/[hexylthiophene]) increased. The nucleation and crystal growth of 97 % regioregular P3HT were greatly enhanced by blending with F<sub>4</sub>TCNQ at low-level MDRs (≤ 0.015). At MDR = 0.015, the doped P3HT film exhibiting highly ordered conjugated nanodomains yielded a superior field-effect mobility of up to 0.10 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup>, considerably higher than the undoped P3HT (∼10<sup>−3</sup> cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup>). At relatively higher doping levels (MDR ≥ 0.05), the doped P3HT films showed large size aggregates with less long range order and resulted in poor transistor performances, while their electrical conductivities gradually increased as the MDR increased. Similarly, a regiorandom P3HT with 55 % regioregularity showed aggregated nanostructures as F<sub>4</sub>TCNQ was loaded, but their electrical properties were far inferior to regioregular P3HTs in the overall MDR ranges (0.005 – 0.5). Also, a diketopyrrolopyrrole-based p-type donor-acceptor copolymer was found to exhibit the <em>µ</em><sub>FET</sub> improvement upon light doping, like the <em>µ</em><sub>FET</sub> trends in rr-P3HT and rra-P3HT. These findings would provide valuable insights into the development of various electronic applications with doped conjugated polymers.</div></div>\",\"PeriodicalId\":22245,\"journal\":{\"name\":\"Synthetic Metals\",\"volume\":\"311 \",\"pages\":\"Article 117810\"},\"PeriodicalIF\":4.6000,\"publicationDate\":\"2025-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Synthetic Metals\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0379677924002728\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"2024/12/2 0:00:00\",\"PubModel\":\"Epub\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Synthetic Metals","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0379677924002728","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2024/12/2 0:00:00","PubModel":"Epub","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

轻掺杂共轭聚合物作为有机薄膜晶体管的一种元件,具有高的非稳态电导率,受到了广泛的关注。在本研究中,系统研究了掺杂剂负载对具有可控区域规则的基准半导体聚合物聚(3-己基噻吩)(P3HT)结构演变和光电性能变化的影响,特别是与晶体管性能的关系。随着摩尔掺杂比(MDR, [F4TCNQ]/[己基噻吩])的增加,掺杂p型分子掺杂剂2,3,5,6-四氟-7,7,8,8-四氰喹啉二甲烷(F4TCNQ)的p3ht呈现出不同的纳米结构。在低mdr(≤0.015)下,与F4TCNQ共混后,97% %的区域规则P3HT的成核和晶体生长得到了显著增强。在MDR = 0.015时,掺杂的P3HT薄膜表现出高度有序的共轭纳米畴,其场效应迁移率高达0.10 cm2 V−1 s−1,大大高于未掺杂的P3HT(~ 10−3 cm2 V−1 s−1)。在较高掺杂水平(MDR≥0.05)时,掺杂的P3HT薄膜呈现出较大的聚集体,且长程有序度较低,导致晶体管性能较差,而其电导率随着MDR的增加而逐渐增加。同样,当F4TCNQ加载时,区域规则度为55% %的区域随机P3HT显示出聚集的纳米结构,但其电学性能在总体MDR范围内远低于区域规则P3HT(0.005 - 0.5)。此外,一种基于二酮吡咯的p型供体-受体共聚物在轻掺杂时表现出了微FET的改善,就像r- p3ht和rra-P3HT中的微FET趋势一样。这些发现将为掺杂共轭聚合物的各种电子应用的发展提供有价值的见解。
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Correlating the structural evolution and charge transport in lightly doped semiconducting polymers of controlled regioregularity
As an element of organic thin-film transistors, lightly doped conjugated polymers without high off-state electrical conductivities have received considerable attention. In this study, the impact of dopant loading in a benchmark semiconducting polymer, poly(3-hexyl thiophene) (P3HT), with controlled regioregularity was systemically investigated in view of structural evolution and change in optoelectronic properties, especially in relation to transistor performance. P3HTs doped with the p-type molecular dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) exhibited distinct nanostructures as the molar dopant ratio (MDR, [F4TCNQ]/[hexylthiophene]) increased. The nucleation and crystal growth of 97 % regioregular P3HT were greatly enhanced by blending with F4TCNQ at low-level MDRs (≤ 0.015). At MDR = 0.015, the doped P3HT film exhibiting highly ordered conjugated nanodomains yielded a superior field-effect mobility of up to 0.10 cm2 V−1 s−1, considerably higher than the undoped P3HT (∼10−3 cm2 V−1 s−1). At relatively higher doping levels (MDR ≥ 0.05), the doped P3HT films showed large size aggregates with less long range order and resulted in poor transistor performances, while their electrical conductivities gradually increased as the MDR increased. Similarly, a regiorandom P3HT with 55 % regioregularity showed aggregated nanostructures as F4TCNQ was loaded, but their electrical properties were far inferior to regioregular P3HTs in the overall MDR ranges (0.005 – 0.5). Also, a diketopyrrolopyrrole-based p-type donor-acceptor copolymer was found to exhibit the µFET improvement upon light doping, like the µFET trends in rr-P3HT and rra-P3HT. These findings would provide valuable insights into the development of various electronic applications with doped conjugated polymers.
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来源期刊
Synthetic Metals
Synthetic Metals 工程技术-材料科学:综合
CiteScore
8.30
自引率
4.50%
发文量
189
审稿时长
33 days
期刊介绍: This journal is an international medium for the rapid publication of original research papers, short communications and subject reviews dealing with research on and applications of electronic polymers and electronic molecular materials including novel carbon architectures. These functional materials have the properties of metals, semiconductors or magnets and are distinguishable from elemental and alloy/binary metals, semiconductors and magnets.
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