利用 Bi2Se3 的调制狄拉克表面态进行自旋到电荷和电荷到自旋转换的比较研究

IF 7.5 Q1 CHEMISTRY, PHYSICAL Applied Surface Science Advances Pub Date : 2025-01-01 DOI:10.1016/j.apsadv.2025.100693
Youngmin Lee , Jonghoon Kim , Seungwon Rho , Seok-Bo Hong , Hyeongmun Kim , Jaehan Park , Dajung Kim , Chul Kang , Myung-Ho Bae , Mann-Ho Cho
{"title":"利用 Bi2Se3 的调制狄拉克表面态进行自旋到电荷和电荷到自旋转换的比较研究","authors":"Youngmin Lee ,&nbsp;Jonghoon Kim ,&nbsp;Seungwon Rho ,&nbsp;Seok-Bo Hong ,&nbsp;Hyeongmun Kim ,&nbsp;Jaehan Park ,&nbsp;Dajung Kim ,&nbsp;Chul Kang ,&nbsp;Myung-Ho Bae ,&nbsp;Mann-Ho Cho","doi":"10.1016/j.apsadv.2025.100693","DOIUrl":null,"url":null,"abstract":"<div><div>Understanding the mechanisms of spin-charge interconversion is a major challenge in modern spintronics. In this study, we investigate the complex charge-to-spin conversion (CSC) and spin-to-charge conversion (SCC) using the modulated Dirac surface state of Bi<sub>2</sub>Se<sub>3</sub> thin films. The role of Bi<sub>2</sub>Se<sub>3</sub>, which possesses a spin-momentum locked Dirac surface state (DSS), in the CSC and SCC processes is explored using spin-torque ferromagnetic resonance (ST-FMR) and terahertz emission methods, respectively. Distinct differences in spin Hall angles are observed in ultrathin Bi<sub>2</sub>Se<sub>3</sub> films on HfO<sub>2-x</sub>, compared to those on a typical substrate, indicating the dependence on the spin-orbit interaction. Specifically, the interaction of d-orbital of the unbound hafnium in HfO<sub>2-x</sub> and Bi<sub>2</sub>Se<sub>3</sub> enhances the spin-orbit interaction. In addition, we found that the complex interaction between the surface and bulk states affects the spin diffusion length and the spin current injection region. The influence of the surface state on the conversion processes decreases as the Bi<sub>2</sub>Se<sub>3</sub> film thickness increases, resulting in differing efficiency for SCC and CSC due to the asymmetrical stack structure. The findings using Bi<sub>2</sub>Se<sub>3</sub> ultrathin films enhance our understanding of DSS-related CSC and SCC mechanisms, paving the way for performance optimization of future spintronic devices.</div></div>","PeriodicalId":34303,"journal":{"name":"Applied Surface Science Advances","volume":"25 ","pages":"Article 100693"},"PeriodicalIF":7.5000,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A comparative study on spin-to-charge and charge-to-spin conversion using modulated Dirac surface states of Bi2Se3\",\"authors\":\"Youngmin Lee ,&nbsp;Jonghoon Kim ,&nbsp;Seungwon Rho ,&nbsp;Seok-Bo Hong ,&nbsp;Hyeongmun Kim ,&nbsp;Jaehan Park ,&nbsp;Dajung Kim ,&nbsp;Chul Kang ,&nbsp;Myung-Ho Bae ,&nbsp;Mann-Ho Cho\",\"doi\":\"10.1016/j.apsadv.2025.100693\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Understanding the mechanisms of spin-charge interconversion is a major challenge in modern spintronics. In this study, we investigate the complex charge-to-spin conversion (CSC) and spin-to-charge conversion (SCC) using the modulated Dirac surface state of Bi<sub>2</sub>Se<sub>3</sub> thin films. The role of Bi<sub>2</sub>Se<sub>3</sub>, which possesses a spin-momentum locked Dirac surface state (DSS), in the CSC and SCC processes is explored using spin-torque ferromagnetic resonance (ST-FMR) and terahertz emission methods, respectively. Distinct differences in spin Hall angles are observed in ultrathin Bi<sub>2</sub>Se<sub>3</sub> films on HfO<sub>2-x</sub>, compared to those on a typical substrate, indicating the dependence on the spin-orbit interaction. Specifically, the interaction of d-orbital of the unbound hafnium in HfO<sub>2-x</sub> and Bi<sub>2</sub>Se<sub>3</sub> enhances the spin-orbit interaction. In addition, we found that the complex interaction between the surface and bulk states affects the spin diffusion length and the spin current injection region. The influence of the surface state on the conversion processes decreases as the Bi<sub>2</sub>Se<sub>3</sub> film thickness increases, resulting in differing efficiency for SCC and CSC due to the asymmetrical stack structure. The findings using Bi<sub>2</sub>Se<sub>3</sub> ultrathin films enhance our understanding of DSS-related CSC and SCC mechanisms, paving the way for performance optimization of future spintronic devices.</div></div>\",\"PeriodicalId\":34303,\"journal\":{\"name\":\"Applied Surface Science Advances\",\"volume\":\"25 \",\"pages\":\"Article 100693\"},\"PeriodicalIF\":7.5000,\"publicationDate\":\"2025-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Surface Science Advances\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2666523925000029\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Surface Science Advances","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2666523925000029","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
A comparative study on spin-to-charge and charge-to-spin conversion using modulated Dirac surface states of Bi2Se3
Understanding the mechanisms of spin-charge interconversion is a major challenge in modern spintronics. In this study, we investigate the complex charge-to-spin conversion (CSC) and spin-to-charge conversion (SCC) using the modulated Dirac surface state of Bi2Se3 thin films. The role of Bi2Se3, which possesses a spin-momentum locked Dirac surface state (DSS), in the CSC and SCC processes is explored using spin-torque ferromagnetic resonance (ST-FMR) and terahertz emission methods, respectively. Distinct differences in spin Hall angles are observed in ultrathin Bi2Se3 films on HfO2-x, compared to those on a typical substrate, indicating the dependence on the spin-orbit interaction. Specifically, the interaction of d-orbital of the unbound hafnium in HfO2-x and Bi2Se3 enhances the spin-orbit interaction. In addition, we found that the complex interaction between the surface and bulk states affects the spin diffusion length and the spin current injection region. The influence of the surface state on the conversion processes decreases as the Bi2Se3 film thickness increases, resulting in differing efficiency for SCC and CSC due to the asymmetrical stack structure. The findings using Bi2Se3 ultrathin films enhance our understanding of DSS-related CSC and SCC mechanisms, paving the way for performance optimization of future spintronic devices.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
CiteScore
8.10
自引率
1.60%
发文量
128
审稿时长
66 days
期刊介绍:
期刊最新文献
Structural features of graphene and silver functionalized graphene oxide loaded with perfluorinated compounds during thermal heating Localized creation of bubble domains in Fe3GaTe2 by conductive atomic force microscopy Influence of pretreatments on the surface charge of anode and cathode materials in spent lithium-ion batteries - a key point for recycling Prussian blue nanocubes growth by electrochemical deposition on sulfur-doped graphene as nanozyme: Optimization and application in the field of environmental sensors Morphology-dependent near-infrared photothermal activity of plasmonic TiN nanobars and nanospheres for anticancer, antibacterial therapy and deep in vivo photoacoustic imaging
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1