具有低反向传导损耗和高正向阈值电压的去耦双通道p-GaN栅极AlGaN/GaN HEMT

IF 4.5 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Electron Device Letters Pub Date : 2024-12-09 DOI:10.1109/LED.2024.3513322

Xiaotian Tang;Zhongchen Ji;Qimeng Jiang;Sen Huang;Xinguo Gao;Ke Wei;Xinhua Wang;Xinyu Liu

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引用次数: 0

摘要

提出并成功制作了一种基于解耦双通道结构的p-GaN栅极（AlGaN/GaN HEMT）。它通过混合源结构将上下通道解耦，从而减轻了p-GaN栅极和双通道结构之间的兼容性问题。由于源侧肖特基连接到下通道，可以同时实现极低的反向导通电压（-0.5 V）和大的正向阈值电压（+3.2 V）。

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Decoupled Double-Channel p-GaN Gate AlGaN/GaN HEMT Featuring Low Reverse Conduction Loss and High Forward Threshold Voltage

A Hybrid-Source p-GaN gate Normally-OFF AlGaN/GaN HEMT is proposed and successfully fabricated, based on a decoupled double-channel structure. It mitigates the compatibility issue between the p-GaN gate and double-channel structures by decoupling the upper and lower channels through a Hybrid-Source structure. Thanks to the source-side Schottky connection to the lower channel, an extremely low reverse turn-ON voltage (-0.5 V) and a large forward threshold voltage (+3.2 V) are simultaneously achieved.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.

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