具有良好光吸收性能的WO₂I₂/聚o-氨基硫酚多孔球形纳米复合材料的制备及其在光电探测器器件中的应用

IF 4 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Optical and Quantum Electronics Pub Date : 2025-02-05 DOI:10.1007/s11082-024-07995-z
Fatemah H. Alkallas, Amira Ben Gouider Trabelsi, Tahani A. Alrebdi, Mohamed Rabia
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引用次数: 0

摘要

本文主要研究了WO₂I₂/聚邻氨基硫酚多孔球形纳米复合材料(WO₂I₂/POATP ps -纳米复合材料)的制备,该材料具有良好的光学吸光度,可用于光电探测器。采用碘氧化邻氨基噻吩,再与硫酸钠(Na₂WO₄)反应,合成了ps -纳米复合材料。所得的纳米复合材料具有广泛的光学吸光度,延伸到红外区,带隙小,为2.0 eV。球形颗粒具有直径为5 nm的孔洞,其结晶峰具有优异的结晶度,晶体尺寸为121 nm。这种晶体行为、形貌和光学吸光度的结合表明,WO₂I₂/POATP ps纳米复合材料是一种高灵敏度的光电探测器,适用于广泛的光谱,包括紫外、可见光和红外区域。通过使用线性扫描伏安法测量光电流,确定光照和黑暗条件下的电流密度(Jph) (Jo),评估了该器件在光子传感中的应用。Jph和Jo值分别为0.8和0.48 mA/cm²,光电流为0.32 mA/cm²,这是一个有希望的值,表明显著的光子灵敏度。根据光子能量对Jph值的影响来评估光响应性(R),随着波长从540 nm减小到340 nm, R值从7.2 mA/W增加到8.0 mA/W。同样,在相同波长范围内,探测率(D)值从0.164 × 10¹⁰增加到0.181 × 10¹⁰Jones。在730 nm时,R和D分别保持6.4 mA/W和0.145 × 10¹⁰Jones的可观值。这种制造的光电器件具有优异的灵敏度、稳定性、可重复性、低成本和大规模生产的潜力,作为一种高效的光电探测器,在工业应用中具有重要的前景。
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Fabrication of WO₂I₂/poly o-amino thiophenol porous spherical-nanocomposite with promising optical absorbance for photodetector device applications

This study focuses on the fabrication of WO₂I₂/poly o-amino-thiophenol porous spherical-nanocomposite (WO₂I₂/POATP PS-nanocomposite) with promising optical absorbance for photodetector applications. The PS-nanocomposite is synthesized through the oxidation of o-amino-thiophenol using iodine, followed by a reaction with Na₂WO₄. The resulting nanocomposite exhibits wide optical absorbance extending into the IR region and a small bandgap of 2.0 eV. The spherical particles have pores with a diameter of 5 nm, and their crystalline peaks demonstrate excellent crystallinity with a crystal size of 121 nm. This combination of crystalline behavior, morphology, and optical absorbance suggests that the WO₂I₂/POATP PS-nanocomposite is a highly sensitive photodetector suitable for a broad optical spectrum, including UV, visible, and IR regions. The device’s application in photon sensing is evaluated by measuring the photocurrent using linear sweep voltammetry, determining the current density (Jph) under light and dark conditions (Jo). The Jph and Jo values are found to be 0.8 and 0.48 mA/cm², respectively, resulting in a photocurrent of 0.32 mA/cm², a promising value that indicates significant photon sensitivity. The photoresponsivity (R) is assessed based on the impact of photon energies on the Jph values, with R values increasing from 7.2 to 8.0 mA/W as the wavelength decreases from 540 to 340 nm. Similarly, the detectivity (D) value increases from 0.164 × 10¹⁰ to 0.181 × 10¹⁰ Jones over the same wavelength range. At 730 nm, both R and D maintain substantial values of 6.4 mA/W and 0.145 × 10¹⁰ Jones, respectively. This fabricated optoelectronic device, with its excellent sensitivity, stability, reproducibility, low cost, and potential for mass production, holds significant promise for industrial applications as a highly effective photodetector.

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来源期刊
Optical and Quantum Electronics
Optical and Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.60
自引率
20.00%
发文量
810
审稿时长
3.8 months
期刊介绍: Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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