Yifu Wang;Weizong Xu;Dong Zhou;Feng Zhou;Fangfang Ren;Dunjun Chen;Rong Zhang;Youdou Zheng;Hai Lu
{"title":"工作在极紫外波段的4H-SiC位置敏感探测器","authors":"Yifu Wang;Weizong Xu;Dong Zhou;Feng Zhou;Fangfang Ren;Dunjun Chen;Rong Zhang;Youdou Zheng;Hai Lu","doi":"10.1109/LED.2024.3521082","DOIUrl":null,"url":null,"abstract":"Extreme ultraviolet (EUV) detectors are essential components required in many cutting-edge applications. In this work, a 6.5 mm <inline-formula> <tex-math>$\\times 6.5$ </tex-math></inline-formula> mm large-area 4H-SiC EUV position sensitive detector (PSD) has been design and fabricated. Based on a synchrotron radiation test system, the SiC PSD exhibits a relatively low position error of <inline-formula> <tex-math>$63~\\mu $ </tex-math></inline-formula>m, a low nonlinearity of 2.1% and a high position resolution of <inline-formula> <tex-math>$8.5~\\mu $ </tex-math></inline-formula>m. The detector also realizes a low dark current of 9 pA, a high responsivity of 0.06 A/W and a low photo-response non-uniformity of less than 1% at 13.5 nm. Together with the superior transient response and stable switching performance, the SiC PSDs present notable potential in high-end EUV position detection applications.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 2","pages":"243-246"},"PeriodicalIF":4.5000,"publicationDate":"2024-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"4H-SiC Position-Sensitive Detector Working in Extreme Ultraviolet Wavelength Band\",\"authors\":\"Yifu Wang;Weizong Xu;Dong Zhou;Feng Zhou;Fangfang Ren;Dunjun Chen;Rong Zhang;Youdou Zheng;Hai Lu\",\"doi\":\"10.1109/LED.2024.3521082\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Extreme ultraviolet (EUV) detectors are essential components required in many cutting-edge applications. In this work, a 6.5 mm <inline-formula> <tex-math>$\\\\times 6.5$ </tex-math></inline-formula> mm large-area 4H-SiC EUV position sensitive detector (PSD) has been design and fabricated. Based on a synchrotron radiation test system, the SiC PSD exhibits a relatively low position error of <inline-formula> <tex-math>$63~\\\\mu $ </tex-math></inline-formula>m, a low nonlinearity of 2.1% and a high position resolution of <inline-formula> <tex-math>$8.5~\\\\mu $ </tex-math></inline-formula>m. The detector also realizes a low dark current of 9 pA, a high responsivity of 0.06 A/W and a low photo-response non-uniformity of less than 1% at 13.5 nm. Together with the superior transient response and stable switching performance, the SiC PSDs present notable potential in high-end EUV position detection applications.\",\"PeriodicalId\":13198,\"journal\":{\"name\":\"IEEE Electron Device Letters\",\"volume\":\"46 2\",\"pages\":\"243-246\"},\"PeriodicalIF\":4.5000,\"publicationDate\":\"2024-12-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Electron Device Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10811942/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10811942/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
极紫外(EUV)探测器是许多尖端应用所需的基本组件。在这项工作中,设计和制造了一个6.5 mm × 6.5 mm的大面积4H-SiC EUV位置敏感探测器(PSD)。基于同步辐射测试系统的SiC PSD具有相对较低的位置误差($63~\mu $ m)、较低的非线性(2.1%)和较高的位置分辨率($8.5~\mu $ m)。该探测器在13.5 nm处具有9 pA的低暗电流、0.06 a /W的高响应性和小于1%的低光响应不均匀性。SiC psd具有优异的瞬态响应和稳定的开关性能,在高端EUV位置检测应用中具有显着的潜力。
4H-SiC Position-Sensitive Detector Working in Extreme Ultraviolet Wavelength Band
Extreme ultraviolet (EUV) detectors are essential components required in many cutting-edge applications. In this work, a 6.5 mm $\times 6.5$ mm large-area 4H-SiC EUV position sensitive detector (PSD) has been design and fabricated. Based on a synchrotron radiation test system, the SiC PSD exhibits a relatively low position error of $63~\mu $ m, a low nonlinearity of 2.1% and a high position resolution of $8.5~\mu $ m. The detector also realizes a low dark current of 9 pA, a high responsivity of 0.06 A/W and a low photo-response non-uniformity of less than 1% at 13.5 nm. Together with the superior transient response and stable switching performance, the SiC PSDs present notable potential in high-end EUV position detection applications.
期刊介绍:
IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.