控制金属卤化物反应性使InSb胶体量子点均匀生长,增强SWIR光检测

IF 26.8 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY Advanced Materials Pub Date : 2025-02-11 DOI:10.1002/adma.202420273
Muhammad Imran, Da Bin Kim, Pan Xia, Francisco Yarur Villanueva, Benjamin Rehl, Joao M. Pina, Yanjiang Liu, Yangning Zhang, Oleksandr Voznyy, Eugenia Kumacheva, Sjoerd Hoogland, Edward H. Sargent
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摘要

InSb胶体量子点(CQDs)在短波红外传感领域前景广阔;然而,它们的合成面临着持续的挑战,特别是在实现精确的尺寸控制方面-这是前体之间反应性控制不佳的结果。本文研究了利用烷基膦和胺基有机添加剂来控制铟和锑前驱体在CQDs成核和生长过程中的反应性。这种有机添加剂和前体之间的相互作用使得合成的InSb CQDs具有狭窄的尺寸分布;带隙在1.2-1.5µm光谱范围内可调;所有这些导致吸收光谱的峰谷比>;1.4。CQDs的表面端有油胺、卤化物和类氧化物的混合物,这阻碍了配体交换反应和随后集成到光电二极管中。因此,我们用烷硫醇重新表面cqd,通过酸碱机制取代天然配体,这种方法可以去除氧化物质。利用一层接一层的制造工艺,将表面表面的InSb CQDs的配体与短有机配体和卤化物配体交换,并将薄膜整合到n-i-p光电二极管结构中。所得器件的检出率为10¹2 Jones,在1380 nm处的外量子效率(EQE)为33%,在连续照明下的T90工作稳定性为19小时。
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Control Over Metal-Halide Reactivity Enables Uniform Growth of InSb Colloidal Quantum Dots for Enhanced SWIR Light Detection

InSb colloidal quantum dots (CQDs) hold promise in short-wave infrared sensing; however, their synthesis presents ongoing challenges, particularly in achieving precise size control – this is the result of poorly controlled reactivity among the precursors. Herein, the use of alkyl-phosphine and amine-based organic additives to control the reactivity of In and Sb precursors during the nucleation and growth of CQDs is developed. This interplay between organic additive and precursors enables the synthesis of InSb CQDs having narrowed size distributions; and bandgaps tunable across the 1.2–1.5 µm spectral range; all this leading to peak-to-valley ratios >1.4 in absorption spectra. The CQDs are surface-terminated with a mixture of oleylamine, halides, and oxide-like species, and this hinders ligand exchange reactions and subsequent integration into photodiodes. We therefore resurface the CQDs with alkanethiols, displacing the native ligands via an acid-base mechanism, an approach that removes oxide species. Using a layer-by-layer fabrication process, the ligands of the resurfaced InSb CQDs are exchanged with short organic and halide ligands and incorporated films into n-i-p photodiode structures. The resultant devices exhibit a detectivity of 10¹2 Jones, an external quantum efficiency (EQE) of 33% at 1380 nm, and T90 operating stability of >19 h under continuous illuminated operation.

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来源期刊
Advanced Materials
Advanced Materials 工程技术-材料科学:综合
CiteScore
43.00
自引率
4.10%
发文量
2182
审稿时长
2 months
期刊介绍: Advanced Materials, one of the world's most prestigious journals and the foundation of the Advanced portfolio, is the home of choice for best-in-class materials science for more than 30 years. Following this fast-growing and interdisciplinary field, we are considering and publishing the most important discoveries on any and all materials from materials scientists, chemists, physicists, engineers as well as health and life scientists and bringing you the latest results and trends in modern materials-related research every week.
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