用于电阻湿度传感的碱金属掺杂SnS2薄膜的揭示、生长和表征

IF 4.9 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Sensors and Actuators A-physical Pub Date : 2025-04-16 Epub Date: 2025-02-11 DOI:10.1016/j.sna.2025.116308
Imane Radja , Florin Tudorache , Bouhalouane Amrani , M'hamed Guezzoul , Abdelkader Nebatti Ech-Chergui , Ali Sadek Kadari , Kouider Driss-Khodja , Minnam Reddy Vasudeva Reddy , Adjdir Mehdi , Choukry Kamel Bendeddouche , Mohammad Mansoob Khan
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引用次数: 0

摘要

二硫化锡(SnS2)薄膜因其多样的结构和电性能而受到重视,越来越多地探索其实际应用。本研究通过喷涂方法研究了SnS2与选定的碱金属(Li, Na和K)的受控掺杂,以增强其功能,特别是在电阻湿度传感方面。沉积过程,精心设计的均匀性和可重复性,结合了精确浓度的掺杂剂来调节薄膜特性。x射线衍射分析表明,由于掺杂,晶格参数和晶体尺寸发生了变化(从10 nm增加到18 nm)。x射线光电子能谱阐明了掺杂引起的结合能的变化和化学计量的变化。电学研究证明了半导体行为,掺杂薄膜在湿度下表现出电阻降低和电容增加,这对湿度传感至关重要。特别是,锂掺杂薄膜的灵敏度为18.78 pF/ % RH,响应时间为85 秒,这表明在湿度传感技术中有很好的应用前景。这项全面的研究为掺杂剂和SnS2性质之间复杂的相互作用提供了见解,为定制材料设计和传感器开发铺平了道路。
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Unveiling growth and characterization of alkali metals-doped SnS2 thin films for resistive humidity sensing
Tin disulfide (SnS2) thin films, prized for their diverse structural and electrical properties, are increasingly explored for practical applications. This study investigates the controlled doping of SnS2 with selected alkali metals (Li, Na, and K) via a spray-coating method to enhance its functionality, particularly in resistive humidity sensing. The deposition process, meticulously designed for uniformity and reproducibility, incorporates precise concentrations of dopants to modulate film characteristics. X-ray diffraction analysis reveals alterations in lattice parameters and crystallite size (increase from 10 nm to 18 nm) due to doping. X-ray photoelectron spectroscopy elucidates shifts in binding energies and stoichiometry changes induced by dopants. Electrical investigations demonstrate semiconductor behavior, with doped films exhibiting reduced resistance and increased capacitance under humidity, which is critical for humidity sensing. Particularly, Li-doped films display a sensitivity of 18.78 pF/ % RH and a response time of 85 seconds, suggesting promising applications in humidity sensing technology. This comprehensive study provides insights into the intricate interplay between dopants and SnS2 properties, paving the way for tailored material design and sensor development.
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来源期刊
Sensors and Actuators A-physical
Sensors and Actuators A-physical 工程技术-工程:电子与电气
CiteScore
8.10
自引率
6.50%
发文量
630
审稿时长
49 days
期刊介绍: Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...
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