{"title":"用于300gb /s以上光链路的异构集成InP电吸收调制器","authors":"Armands Ostrovskis;Krzysztof Szczerba;Toms Salgals;Erik Norberg;Michael Koenigsmann;John Sonkoly;Kristaps Rubuls;Han Yun;Benjamin Krüger;Molly Piels;Arvids Sedulis;Fabio Pittalà;Sandis Spolitis;Markus Gruen;Hadrien Louchet;Robert Jahn;Kazuo Yamaguchi;Vjaceslavs Bobrovs;Xiaodan Pang;Robert Guzzon;Oskars Ozolins","doi":"10.1109/JLT.2025.3526822","DOIUrl":null,"url":null,"abstract":"The recent AI boom requires more focus on energy-efficient and scalable optical interconnects. Silicon Photonics is enabling technology to satisfy growing demand. However, the lack of lasers and high-performance modulators hinders wide-scale adoption. Therefore, we present a heterogeneously integrated Indium Phosphide electro-absorption modulator with Silicon waveguides. We demonstrate up to 256 Gb/s on-off keying, 340 Gb/s 4-level pulse amplitude modulation, 375 Gb/s 6-level pulse amplitude modulation, and 360 Gb/s 8-level pulse amplitude modulation transmission over 500 m and 6 km of single-mode fiber with performance satisfying requirements of 6.25% overhead hard-decision forward error correction threshold of 4.5×10<sup>−3</sup>. Additionally, we investigate the modulator at 200 Gb/s per lane scenarios, demonstrating excellent performance with a simple seven-tap feed-forward equalizer.","PeriodicalId":16144,"journal":{"name":"Journal of Lightwave Technology","volume":"43 4","pages":"1826-1836"},"PeriodicalIF":5.2000,"publicationDate":"2025-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Heterogeneously Integrated InP Electro-Absorption Modulator for Beyond 300 Gb/s Optical Links\",\"authors\":\"Armands Ostrovskis;Krzysztof Szczerba;Toms Salgals;Erik Norberg;Michael Koenigsmann;John Sonkoly;Kristaps Rubuls;Han Yun;Benjamin Krüger;Molly Piels;Arvids Sedulis;Fabio Pittalà;Sandis Spolitis;Markus Gruen;Hadrien Louchet;Robert Jahn;Kazuo Yamaguchi;Vjaceslavs Bobrovs;Xiaodan Pang;Robert Guzzon;Oskars Ozolins\",\"doi\":\"10.1109/JLT.2025.3526822\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The recent AI boom requires more focus on energy-efficient and scalable optical interconnects. Silicon Photonics is enabling technology to satisfy growing demand. However, the lack of lasers and high-performance modulators hinders wide-scale adoption. Therefore, we present a heterogeneously integrated Indium Phosphide electro-absorption modulator with Silicon waveguides. We demonstrate up to 256 Gb/s on-off keying, 340 Gb/s 4-level pulse amplitude modulation, 375 Gb/s 6-level pulse amplitude modulation, and 360 Gb/s 8-level pulse amplitude modulation transmission over 500 m and 6 km of single-mode fiber with performance satisfying requirements of 6.25% overhead hard-decision forward error correction threshold of 4.5×10<sup>−3</sup>. Additionally, we investigate the modulator at 200 Gb/s per lane scenarios, demonstrating excellent performance with a simple seven-tap feed-forward equalizer.\",\"PeriodicalId\":16144,\"journal\":{\"name\":\"Journal of Lightwave Technology\",\"volume\":\"43 4\",\"pages\":\"1826-1836\"},\"PeriodicalIF\":5.2000,\"publicationDate\":\"2025-01-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Lightwave Technology\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10829959/\",\"RegionNum\":1,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Lightwave Technology","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10829959/","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
The recent AI boom requires more focus on energy-efficient and scalable optical interconnects. Silicon Photonics is enabling technology to satisfy growing demand. However, the lack of lasers and high-performance modulators hinders wide-scale adoption. Therefore, we present a heterogeneously integrated Indium Phosphide electro-absorption modulator with Silicon waveguides. We demonstrate up to 256 Gb/s on-off keying, 340 Gb/s 4-level pulse amplitude modulation, 375 Gb/s 6-level pulse amplitude modulation, and 360 Gb/s 8-level pulse amplitude modulation transmission over 500 m and 6 km of single-mode fiber with performance satisfying requirements of 6.25% overhead hard-decision forward error correction threshold of 4.5×10−3. Additionally, we investigate the modulator at 200 Gb/s per lane scenarios, demonstrating excellent performance with a simple seven-tap feed-forward equalizer.
期刊介绍：
The Journal of Lightwave Technology is comprised of original contributions, both regular papers and letters, covering work in all aspects of optical guided-wave science, technology, and engineering. Manuscripts are solicited which report original theoretical and/or experimental results which advance the technological base of guided-wave technology. Tutorial and review papers are by invitation only. Topics of interest include the following: fiber and cable technologies, active and passive guided-wave componentry (light sources, detectors, repeaters, switches, fiber sensors, etc.); integrated optics and optoelectronics; and systems, subsystems, new applications and unique field trials. System oriented manuscripts should be concerned with systems which perform a function not previously available, out-perform previously established systems, or represent enhancements in the state of the art in general.
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