Inert nature of non-polar GaN thin films against energetic x-rays (4 MeV)

Here, in the present article, we report the inert nature of non-polar gallium nitride (GaN) thin films against highly energetic 4 MeV x- rays irradiation of varying dosages. For the study, a set of quality GaN films having non-polar crystallographic orientations on sapphire substrate deposited using the pulsed laser deposition (PLD) route was used. To investigate the effect of energetic radiations on film's physical and chemical properties, the films were exposed to the energetic x-rays with varying dose values from 8 to 12 kilogray (kGy) in an atmospheric environment, where x-rays were produced by the bremsstrahlung process. The effect of harsh environments on the physical and chemical properties associated with these films using respective techniques. The structural, microstructural as well as chemical investigation confirms the resistive nature of these films against the highly energetic x-rays. Thus from the earlier and present research work, we assure that the non-polar GaN films can be the most suitable option to fabricate next-generation high-energy radiation detectors.