基于光场操纵的X-LiNbO3/蓝宝石光学温度传感器

IF 5.1 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Sensors and Actuators A-physical Pub Date : 2025-06-01 Epub Date: 2025-02-28 DOI:10.1016/j.sna.2025.116357

Xinbing Jiao, Xueping Gong, Zixuan Guo

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引用次数: 0

摘要

提出了一种基于光场强度控制的x-LiNbO3/蓝宝石光学温度传感器。温度从25到35 ℃变化。选择1535 nm、1550 nm和1565 nm圆偏振（CP）和线性偏振（LP）激光束。结果表明，x-LiNbO3/蓝宝石的温度分辨率因Goos-Hänchen （GH）和Imbert-Fedorov （IF）位移而不同。基于中频位移，1565 nm LP激光束的最佳温度分辨率为0.028 ℃。当波长为1550 nm的CP光束反射x-LiNbO3/蓝宝石时，反射率从19.47 %增加到89.42 %。当波长为1550 nm时，基于反射率的x-LiNbO3/蓝宝石光学温度传感器的最佳分辨率为1.45 × 10−4℃。基于光场强度控制的x-LiNbO3/蓝宝石光学温度传感器意味着光学传感器设计、分析和测试的进步。

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X-LiNbO3/sapphire optical temperature sensor based on light field manipulation

An x-LiNbO₃/sapphire optical temperature sensor based on light field intensity manipulation is proposed. The temperature changes from 25 to 35 ℃. The 1535 nm, 1550 nm, and 1565 nm circularly polarized (CP) and linearity polarized (LP) laser beams are chosen. The results indicate that the temperature resolutions of the x-LiNbO₃/sapphire are different based on the Goos-Hänchen (GH) and Imbert-Fedorov (IF) shifts. The optimal temperature resolution with a 1565 nm LP laser beam is 0.028 ℃ based on the IF shifts. The reflectivity changes from 19.47 % to 89.42 %, when the 1550 nm CP laser beam reflects from the x-LiNbO₃/sapphire. The best resolution of the x-LiNbO₃/sapphire optical temperature sensor based on the reflectivity is 1.45 × 10⁻⁴℃ when the 1550 nm CP laser beam is used. The x-LiNbO₃/sapphire optical temperature sensor based on light field intensity manipulation implies advances in the design, analysis, and testing of optical sensors.

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来源期刊

Sensors and Actuators A-physical 工程技术-工程：电子与电气

CiteScore

8.10

自引率

6.50%

发文量

630

审稿时长

49 days

期刊介绍： Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...