在泡沫镍上直接化学气相沉积CoO用于超级电容器电极

Next Materials Pub Date : 2025-07-01 Epub Date: 2025-02-28 DOI:10.1016/j.nxmate.2025.100570
Joseph Anthony Duncan Jr., Farhan Azim, Alisha Dhakal, Himal Pokhrel, Sanjay R. Mishra, Shawn David Pollard
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引用次数: 0

摘要

以氯化钴(CoCl2·6H2O)为前驱体,采用低压化学气相沉积法在泡沫镍上直接生长氧化钴(CoO)。用扫描电子显微镜、x射线衍射和x射线光电子能谱对所得涂层进行了评价,结果显示,在三维多孔结构中,CoO的生长明显,表面无序。随后,利用电化学阻抗谱(EIS)、恒流充放电(GCD)和循环伏安法对所得结构的电化学性能进行了评估,结果表明,在1.0 M KOH水溶液中,以10 mV/s的扫描速率,所得结构的最大比电容为1.10 F/cm2,显著高于对照泡沫镍电极样品。从EIS分析中观察到低电荷转移和溶液电阻,表明在cu涂层的Ni泡沫电极- koh电解质界面上快速氧化还原反应的影响。在低电流密度下,通过GCD测量获得的延长放电时间证明了Ni-CoO电极的电容效率提高,从而使其成为储能应用领域的潜在候选材料。
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Direct chemical vapor deposition of CoO on Ni-foam for supercapacitor electrode applications
Low-pressure chemical vapor deposition was used to grow cobalt oxide (CoO) directly on nickel foam using a Cobalt Chloride (CoCl2·6H2O) precursor. The resultant coating was evaluated with scanning electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy, which revealed a disordered surface with significant growth of CoO throughout the three-dimensional porous structure. The electrochemical performance of the resultant structure was subsequently evaluated using electrochemical impedance spectroscopy (EIS), galvanostatic charge-discharge (GCD), and cyclic voltammetry, showing a maximum specific capacitance of 1.10 F/cm2 in a 1.0 M KOH aqueous solution at a 10 mV/s scan rate, significantly higher than that obtained for a control nickel foam electrode sample. Low charge transfer and solution resistances observed from EIS analysis suggested the influence of fast redox reactions at the CoO-coated Ni foam electrode-KOH electrolyte interface. The extended discharge times obtained from GCD measurements at low current densities demonstrate improved capacitive efficiency of the Ni-CoO electrode, thus making it a potential candidate in the field of energy storage application.
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