IF 2.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Electron Devices Pub Date : 2025-02-04 DOI:10.1109/TED.2025.3532581
Zhouchao Gan;Chenyu Zhang;Fan Yang;Dongdong Zhang;Yinghao Ma;Menghua Huang;Xiangshui Miao;Xingsheng Wang
{"title":"Efficiently Implemented Logic Primitives of MUX and XOR Based on Memristors and Applications in Full-Adder Functions","authors":"Zhouchao Gan;Chenyu Zhang;Fan Yang;Dongdong Zhang;Yinghao Ma;Menghua Huang;Xiangshui Miao;Xingsheng Wang","doi":"10.1109/TED.2025.3532581","DOIUrl":null,"url":null,"abstract":"Logic-in-memory (LIM) computing is expected to break the von Neumann bottleneck by performing logical operations in memory. This article presents a novel 2–1 multiplexer (MUX) scheme based on memristors that requires only two steps and three memristors. The proposed MUX logic can be executed natively in a memristor array, facilitating the construction of complex logic and arithmetic functions. Employing the proposed 2–1 MUX logic combined with <sc>xor</small> logic, the 1-bit full-adder (FA) function is efficiently implemented and experimentally verified. The area and delay overheads of both serial and parallel architectures of n-bit FAs are derived, and the FA function is experimentally verified through a 4-bit carry-select adder case. Compared with IMPLY logic, the proposed FA scheme shows a significant performance improvement without sacrificing power consumption. The experimental results demonstrate the efficiency of the proposed MUX logic in accelerating FA functions, paving the way for building efficient LIM systems.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1118-1124"},"PeriodicalIF":2.9000,"publicationDate":"2025-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10870277/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

内存逻辑(LIM)计算有望通过在内存中执行逻辑运算来打破冯-诺依曼瓶颈。本文介绍了一种基于忆阻器的新型 2-1 多路复用器(MUX)方案,该方案只需两个步骤和三个忆阻器。所提出的多路复用逻辑可在忆阻器阵列中本地执行,便于构建复杂的逻辑和算术功能。利用所提出的 2-1 MUX 逻辑与 xor 逻辑相结合,高效地实现了 1 位全梯形图(FA)功能,并通过实验进行了验证。推导出了 n 位 FA 的串行和并行架构的面积和延迟开销,并通过 4 位带选加法器实例对 FA 函数进行了实验验证。与 IMPLY 逻辑相比,所提出的 FA 方案在不牺牲功耗的情况下显著提高了性能。实验结果证明了所提出的 MUX 逻辑在加速 FA 功能方面的效率,为构建高效的 LIM 系统铺平了道路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Efficiently Implemented Logic Primitives of MUX and XOR Based on Memristors and Applications in Full-Adder Functions
Logic-in-memory (LIM) computing is expected to break the von Neumann bottleneck by performing logical operations in memory. This article presents a novel 2–1 multiplexer (MUX) scheme based on memristors that requires only two steps and three memristors. The proposed MUX logic can be executed natively in a memristor array, facilitating the construction of complex logic and arithmetic functions. Employing the proposed 2–1 MUX logic combined with xor logic, the 1-bit full-adder (FA) function is efficiently implemented and experimentally verified. The area and delay overheads of both serial and parallel architectures of n-bit FAs are derived, and the FA function is experimentally verified through a 4-bit carry-select adder case. Compared with IMPLY logic, the proposed FA scheme shows a significant performance improvement without sacrificing power consumption. The experimental results demonstrate the efficiency of the proposed MUX logic in accelerating FA functions, paving the way for building efficient LIM systems.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
期刊最新文献
Table of Contents IEEE Transactions on Electron Devices Publication Information Corrections to “Stimulated Secondary Emission of Single-Photon Avalanche Diodes” Call for Papers: Journal of Lightwave Technology Special Issue on OFS-29 Call for Nominations for Editor-in-Chief: IEEE Transactions on Semiconductor Manufacturing
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1