基于束边电位曲线拟合的快速电子枪设计方法

IF 3.2 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Electron Devices Pub Date : 2025-01-10 DOI:10.1109/TED.2025.3526122
C. Zhang;Jinchi Cai;P. C. Yin;Z. X. Su;X. K. Zhang;L. Zeng;Z. Zhang;J. Xu;L. N. Yue;H. R. Yin;Y. Xu;G. Q. Zhao;W. X. Wang;Y. Y. Wei
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引用次数: 0

摘要

为了缩短二维轴对称电子枪的设计周期,本文提出了一种新的设计方法。与通过粒子模拟迭代电子枪结构的方法不同,对于阳极-阴极间隙内的初级光束光学设计,该方法主要需要纯静电模拟来获得目标光束边缘电位分布图。基于这种方法,可以快速获得所需的电子枪结构,包括阴极、控制电极和阳极。处理高阶效应的后续粒子模拟通常需要相对于阳极-阴极间隙进行较小的几何调整以完成整个设计。结果表明,采用该方法可获得具有良好轨迹层流度的目标光束参数。对三种不同配置的电子枪的仿真也表明,只要满足靶束边缘电位分布,任何控制电极都可以达到相同的目的。最后,用一种电子枪构型讨论了影响电子层流的因素。在此基础上,总结了一套清晰完整的电子枪主光束光学设计流程。
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Fast Electron Gun Design Methodology Based on Fitting the Beam-Edge Potential Profiles
To shorten the design cycle of the 2-D axisymmetric electron gun, a new design methodology is reported in this article. Unlike the method of iterating the electron gun structure through particle simulations, for the primary beam optics design in the anode-cathode gap, this method mainly needs pure electrostatic simulations to achieve the target beam-edge potential profiles. Based on such an approach, the required electron gun structure, including the cathode, control electrode, and anode, can be quickly obtained. The subsequent particle simulations for handling higher order effects typically require minor geometry adjustments relative to the anode-cathode gap to complete the whole design. Following the proposed procedure, the results show that the target beam parameter with good trajectory laminarity would be obtained. The simulations on electron guns with three different configurations also reveal that any control electrode could achieve the same goal if it satisfies the target beam-edge potential profiles. Finally, the factors affecting the electron laminarity are discussed using one of the electron gun configurations. After that, a set of clear and complete primary beam optics design processes for the electron gun is summarized.
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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