Y. Y. Guo;R. Degraeve;T. Ravsher;D. Garbin;P. Roussel;G. S. Kar;E. Bury;D. Linten;I. Verbauwhede
{"title":"用于超低能耗物理存储计算的 Ovonic 阈值开关","authors":"Y. Y. Guo;R. Degraeve;T. Ravsher;D. Garbin;P. Roussel;G. S. Kar;E. Bury;D. Linten;I. Verbauwhede","doi":"10.1109/TED.2025.3533390","DOIUrl":null,"url":null,"abstract":"In this article, we demonstrate physical reservoir computing (RC) in ovonic threshold switching (OTS) devices. We show that SiGeAsSe OTS is suitable as a physical reservoir because of the nonlinear change in the number of delocalized defects. With the combination of phase space reconstruction (PSR), our algorithm can project data into high-dimensional spaces, thereby enhancing the distinguishability of the data. Such ability is suitable for high-accuracy authentication and classification. Our algorithm can be implemented using both crossbar arrays or individual devices, and achieves a significantly low (0.08%) equal error rate (EER) on gait authentication in simulation. Furthermore, we validated our concept by successfully implementing the algorithm on nine hardware OTS devices and achieved an EER of 4.2% on gait authentication. The low leakage current level of OTS, the fast learning of RC, and interval-based readout responses all contribute to a significantly reduced energy consumption of our proposed method.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1112-1117"},"PeriodicalIF":2.9000,"publicationDate":"2025-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ovonic Threshold Switching for Ultralow Energy Physical Reservoir Computing\",\"authors\":\"Y. Y. Guo;R. Degraeve;T. Ravsher;D. Garbin;P. Roussel;G. S. Kar;E. Bury;D. Linten;I. Verbauwhede\",\"doi\":\"10.1109/TED.2025.3533390\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this article, we demonstrate physical reservoir computing (RC) in ovonic threshold switching (OTS) devices. We show that SiGeAsSe OTS is suitable as a physical reservoir because of the nonlinear change in the number of delocalized defects. With the combination of phase space reconstruction (PSR), our algorithm can project data into high-dimensional spaces, thereby enhancing the distinguishability of the data. Such ability is suitable for high-accuracy authentication and classification. Our algorithm can be implemented using both crossbar arrays or individual devices, and achieves a significantly low (0.08%) equal error rate (EER) on gait authentication in simulation. Furthermore, we validated our concept by successfully implementing the algorithm on nine hardware OTS devices and achieved an EER of 4.2% on gait authentication. The low leakage current level of OTS, the fast learning of RC, and interval-based readout responses all contribute to a significantly reduced energy consumption of our proposed method.\",\"PeriodicalId\":13092,\"journal\":{\"name\":\"IEEE Transactions on Electron Devices\",\"volume\":\"72 3\",\"pages\":\"1112-1117\"},\"PeriodicalIF\":2.9000,\"publicationDate\":\"2025-02-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Electron Devices\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10870331/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10870331/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Ovonic Threshold Switching for Ultralow Energy Physical Reservoir Computing
In this article, we demonstrate physical reservoir computing (RC) in ovonic threshold switching (OTS) devices. We show that SiGeAsSe OTS is suitable as a physical reservoir because of the nonlinear change in the number of delocalized defects. With the combination of phase space reconstruction (PSR), our algorithm can project data into high-dimensional spaces, thereby enhancing the distinguishability of the data. Such ability is suitable for high-accuracy authentication and classification. Our algorithm can be implemented using both crossbar arrays or individual devices, and achieves a significantly low (0.08%) equal error rate (EER) on gait authentication in simulation. Furthermore, we validated our concept by successfully implementing the algorithm on nine hardware OTS devices and achieved an EER of 4.2% on gait authentication. The low leakage current level of OTS, the fast learning of RC, and interval-based readout responses all contribute to a significantly reduced energy consumption of our proposed method.
期刊介绍:
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.