Huimin Geng;Enhao Guan;Jianqun Yang;Gang Lv;Weiqi Li;Zhongli Liu;Wenzhu Shao;Xingji Li
{"title":"New Evidence for Nonradiative Recombination Enhanced Defect Reaction Effect at Si-SiO₂ Interface Traps","authors":"Huimin Geng;Enhao Guan;Jianqun Yang;Gang Lv;Weiqi Li;Zhongli Liu;Wenzhu Shao;Xingji Li","doi":"10.1109/TED.2025.3532410","DOIUrl":null,"url":null,"abstract":"The evolution states of Si-SiO2 interface traps have been attracting much attention, but there are few reports on the recombination enhanced defect reaction (REDR) effect at interface traps. Here, the REDR effect is studied at the Si-SiO2 interface in the base region of gate-controlled lateral p-n-p transistors (GLPNPs) by forward bias method. There is a significant correlation between the peak variation and the ionization defects (oxide charges and interface traps) in gate sweep (GS) curve. For GLPNPs with high oxide charges and low interface traps, the change rate of surface recombination current at peak in GS curve is smaller. This result provides strong evidence for the REDR effect of interface traps. In addition, based on technology computer-aided design (TCAD) simulation, the possible change of interface traps state after REDR effect is proposed.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"965-970"},"PeriodicalIF":2.9000,"publicationDate":"2025-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10872788/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
New Evidence for Nonradiative Recombination Enhanced Defect Reaction Effect at Si-SiO₂ Interface Traps
The evolution states of Si-SiO2 interface traps have been attracting much attention, but there are few reports on the recombination enhanced defect reaction (REDR) effect at interface traps. Here, the REDR effect is studied at the Si-SiO2 interface in the base region of gate-controlled lateral p-n-p transistors (GLPNPs) by forward bias method. There is a significant correlation between the peak variation and the ionization defects (oxide charges and interface traps) in gate sweep (GS) curve. For GLPNPs with high oxide charges and low interface traps, the change rate of surface recombination current at peak in GS curve is smaller. This result provides strong evidence for the REDR effect of interface traps. In addition, based on technology computer-aided design (TCAD) simulation, the possible change of interface traps state after REDR effect is proposed.
期刊介绍：
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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