Anh Thi Nguyen, Jungyoon Cho, Malkeshkumar Patel, Duc Anh Vu, Jungeun Song, Dongseok Suh, Ambrose Seo, Joondong Kim, Dong-Wook Kim
{"title":"银纳米线集成MoS2/ZnO异质结用于高效光电电荷转移","authors":"Anh Thi Nguyen, Jungyoon Cho, Malkeshkumar Patel, Duc Anh Vu, Jungeun Song, Dongseok Suh, Ambrose Seo, Joondong Kim, Dong-Wook Kim","doi":"10.1002/aelm.202400744","DOIUrl":null,"url":null,"abstract":"<p>The integration of silver nanowire (AgNW) networks with MoS<sub>2</sub>/ZnO heterojunctions leads to a remarkable enhancement in surface photovoltage (SPV) response. In the visible wavelength range, the heterojunctions with AgNWs achieve an SPV signal of ≈200 mV, a fourfold increase compared to the counterparts without AgNWs (≈50 mV). Wavelength-dependent nanoscopic SPV mapping suggests that this enhancement originates from efficient charge transfer between MoS<sub>2</sub> and ZnO. Moreover, the embedded AgNWs raise the local electric potential at the MoS<sub>2</sub> surface by several tens of mV, thereby facilitating the collection of photogenerated electrons. Optical calculations reveal that AgNWs concentrate incident light in neighboring layers across a broad wavelength range, further boosting photocarrier generation. These results, along with photoluminescence spectra, suggest that photocarrier transfer at the MoS<sub>2</sub>/ZnO heterointerfaces is significantly enhanced due to the synergistic effects of light concentration, local potential modifications, and improved electric conduction caused by the AgNW networks.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 6","pages":""},"PeriodicalIF":5.3000,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202400744","citationCount":"0","resultStr":"{\"title\":\"Ag Nanowire-Integrated MoS2/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer\",\"authors\":\"Anh Thi Nguyen, Jungyoon Cho, Malkeshkumar Patel, Duc Anh Vu, Jungeun Song, Dongseok Suh, Ambrose Seo, Joondong Kim, Dong-Wook Kim\",\"doi\":\"10.1002/aelm.202400744\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The integration of silver nanowire (AgNW) networks with MoS<sub>2</sub>/ZnO heterojunctions leads to a remarkable enhancement in surface photovoltage (SPV) response. In the visible wavelength range, the heterojunctions with AgNWs achieve an SPV signal of ≈200 mV, a fourfold increase compared to the counterparts without AgNWs (≈50 mV). Wavelength-dependent nanoscopic SPV mapping suggests that this enhancement originates from efficient charge transfer between MoS<sub>2</sub> and ZnO. Moreover, the embedded AgNWs raise the local electric potential at the MoS<sub>2</sub> surface by several tens of mV, thereby facilitating the collection of photogenerated electrons. Optical calculations reveal that AgNWs concentrate incident light in neighboring layers across a broad wavelength range, further boosting photocarrier generation. These results, along with photoluminescence spectra, suggest that photocarrier transfer at the MoS<sub>2</sub>/ZnO heterointerfaces is significantly enhanced due to the synergistic effects of light concentration, local potential modifications, and improved electric conduction caused by the AgNW networks.</p>\",\"PeriodicalId\":110,\"journal\":{\"name\":\"Advanced Electronic Materials\",\"volume\":\"11 6\",\"pages\":\"\"},\"PeriodicalIF\":5.3000,\"publicationDate\":\"2025-03-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202400744\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Electronic Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://advanced.onlinelibrary.wiley.com/doi/10.1002/aelm.202400744\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://advanced.onlinelibrary.wiley.com/doi/10.1002/aelm.202400744","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Ag Nanowire-Integrated MoS2/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer
The integration of silver nanowire (AgNW) networks with MoS2/ZnO heterojunctions leads to a remarkable enhancement in surface photovoltage (SPV) response. In the visible wavelength range, the heterojunctions with AgNWs achieve an SPV signal of ≈200 mV, a fourfold increase compared to the counterparts without AgNWs (≈50 mV). Wavelength-dependent nanoscopic SPV mapping suggests that this enhancement originates from efficient charge transfer between MoS2 and ZnO. Moreover, the embedded AgNWs raise the local electric potential at the MoS2 surface by several tens of mV, thereby facilitating the collection of photogenerated electrons. Optical calculations reveal that AgNWs concentrate incident light in neighboring layers across a broad wavelength range, further boosting photocarrier generation. These results, along with photoluminescence spectra, suggest that photocarrier transfer at the MoS2/ZnO heterointerfaces is significantly enhanced due to the synergistic effects of light concentration, local potential modifications, and improved electric conduction caused by the AgNW networks.
期刊介绍:
Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.