界面极化和弛豫铁电协同作用在柔性BSZT/三元共聚物复合材料中的巨大电热冷却

IF 4.6 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Materials Science in Semiconductor Processing Pub Date : 2025-08-01 Epub Date: 2025-04-02 DOI:10.1016/j.mssp.2025.109536
Mingtao Zhu , Hao Hu , Hongjian Zhang , Tian Zhang , Yong Zhang
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引用次数: 0

摘要

随着全球对能源效率和环境保护的日益关注,传统制冷技术面临着重大挑战。电热效应(ECE)作为一种固态环保制冷技术,以其可控性和广泛的适用性成为下一代制冷解决方案的研究热点。一个关键的挑战在于开发在低电场下表现出大温度变化的材料。在本研究中,我们将基于bszt的弛豫铁电填料集成到三元共聚物基体P(VDF-TrFE-CFE)中,设计了一种具有显著电热性能的柔性复合薄膜。实验结果表明,BSZT填料的加入通过界面极化效应显著提高了复合材料的介电响应和极化强度。在75 MV/m的中等电场下,该复合材料实现了11.2 K的显著绝热温度变化,这是纯聚合物基体(ΔT = 4.09 K)的约2.7倍。这项工作为绿色制冷技术提供了一种新的材料解决方案,特别有希望应用于便携式和可穿戴设备。
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Giant electrocaloric cooling in flexible BSZT/Terpolymer composites enabled by interfacial polarization and relaxor ferroelectric synergy
With increasing global concerns about energy efficiency and environmental protection, conventional refrigeration technologies face significant challenges. The electrocaloric effect (ECE), as a solid-state and eco-friendly refrigeration technology, has emerged as a research hotspot for next-generation cooling solutions due to its performance controllability and broad applicability. A critical challenge lies in developing materials that exhibit large temperature change under low electric field. In this study, we designed a flexible composite film with remarkable electrocaloric capability by integrating BSZT-based relaxor ferroelectric fillers into a ternary copolymer matrix P(VDF-TrFE-CFE). Experimental results demonstrate that the incorporation of BSZT fillers significantly enhances the dielectric response and polarization intensity of the composites through interfacial polarization effect. Under a moderate electric field of 75 MV/m, the composite achieves a prominent adiabatic temperature change of 11.2 K, which is ∼2.7 times of the pure polymer matrix (ΔT = 4.09 K). This work provides a novel material solution for green refrigeration technology, particularly promising for applications in portable and wearable devices.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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