Fabio Bersano, Michele Aldeghi, Niccolò Martinolli, Victor Boureau, Thibault Aboud, Michele Ghini, Pasquale Scarlino, Gian Salis, Adrian M. Ionescu
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引用次数: 0
摘要
在第2419940号文章中，Fabio Bersano, Adrian M. Ionescu及其同事通过沿载流子流动方向磁化的铁磁门，在绝缘体上的硅纳米线中实现了静电和磁控制。磁性栅极堆栈与标准金属栅极堆栈交替，集成到前端线兼容过程中。
Integration of Cobalt Ferromagnetic Control Gates for Electrical and Magnetic Manipulation of Semiconductor Quantum Dots (Adv. Funct. Mater. 14/2025)
Semiconductor Quantum Dots
In article number 2419940, Fabio Bersano, Adrian M. Ionescu, and co-workers achieve electrostatic and magnetic control in a silicon-on-insulator nanowire through ferromagnetic gates magnetized along the direction of carrier flow. The magnetic gate stack, alternating with a standard metallic one, is integrated into a front-end-of-line–compatible process.
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