Shuang Fu , Jinyuan Zhang , Junhao Ma , Qincan Ma , Xianzhong Lin , Yueli Zhang
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Enhancement of light absorption and charge separation through construction of Bi/BiOBr-Bi4O5I2 heterojunction for efficient degradation of bisphenol A
How to realize the efficient utilization of the solar energy and the separation capacity of photo-generated charges is an instant problem in the field of photocatalytic degradation utilizing bismuth oxyhalide. Here, Bi/BiOBr-Bi4O5I2 (BOB-BI) heterojunctions have been successfully designed and constructed. The optimized 1BOB-1BI heterojunction achieves a 100 % degradation rate of BPA under simulated solar light illumination (25 min). This excellent photocatalytic ability is ascribable to the synergistic effect of Bi particles and the formation of heterojunction. The significantly improved light absorption of the photocatalyst was benefited by the localized surface plasmon resonance (LSPR) effect of Bi particles. The construction of the heterojunction effectively reduces the interfacial transfer resistance, enhancing the separation capacity of photo-generated charges. This research provides a deep insight to the construction of effective bismuth-based heterojunction photocatalysts.
期刊介绍：
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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