基于耦合效应的Sagnac环水滴型单模光纤折射率传感

IF 4.9 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Sensors and Actuators A-physical Pub Date : 2025-04-03 DOI:10.1016/j.sna.2025.116535

Xiaoya Fan , Huirong Zhang , Weibin Feng , Yunfan Xu , Yuefeng Qi

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引用次数: 0

摘要

将锥形单模光纤（SMF）的两个过渡区交叉重叠，形成具有Sagnac环（SL）的水滴型单模微光纤（SMMF）。当入射光通过重叠区域时，产生第一次耦合。然后，产生的两束光在SL内以两个相反的方向传输，然后重新进入重叠区域进行第二次耦合。最后，耦合光从传输口输出。在所提出的传感结构中，重叠区域的耦合效应和锥腰区域的弯曲增强了传感器对周围介质的响应。与基于Mach-Zehnder干涉仪（MZI）的锥形SMF相比，所设计传感器的最大灵敏度达到6481.25 nm/RIU，提高了2.89倍。因此，所设计的传感器有利于监测医疗保健和食品样品中的葡萄糖浓度。

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Drop-shaped single-mode microfiber with Sagnac loop based on coupling effect for refractive index sensing

A drop-shaped single-mode microfiber (SMMF) with Sagnac loop (SL) is formed by crossing and overlapping two transition regions of conical single-mode fiber (SMF). When the incident light passes through the overlapping region, the first coupling is generated. Then, two beams of light generated are transmitted in two opposite directions within SL. Subsequently, they re-enter the overlapping region for the second coupling. Finally, the coupled light is output from the transmission port. In the proposed sensing structure, the coupling effect of the overlapping region and the bending of the cone waist region enhance the response of sensor to the surrounding medium. Compared with the conical SMF based on Mach-Zehnder interferometer (MZI), the maximum sensitivity of the designed sensor is improved by 2.89 times, reaching 6481.25 nm/RIU. Therefore, the designed sensor is beneficial for monitoring glucose concentrations in healthcare and food samples.

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来源期刊

Sensors and Actuators A-physical 工程技术-工程：电子与电气

CiteScore

8.10

自引率

6.50%

发文量

630

审稿时长

49 days

期刊介绍： Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...