带通孔的 K 波段铌酸锂 A3 兰姆波谐振器

IF 3.1 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Microelectromechanical Systems Pub Date : 2025-02-18 DOI:10.1109/JMEMS.2025.3540960
Shu-Mao Wu;Hao Yan;Chen-Bei Hao;Zhen-Hui Qin;Si-Yuan Yu;Yan-Feng Chen
{"title":"带通孔的 K 波段铌酸锂 A3 兰姆波谐振器","authors":"Shu-Mao Wu;Hao Yan;Chen-Bei Hao;Zhen-Hui Qin;Si-Yuan Yu;Yan-Feng Chen","doi":"10.1109/JMEMS.2025.3540960","DOIUrl":null,"url":null,"abstract":"Addressing critical challenges in Lamb wave resonators, this paper presents the first validation of resonators incorporating through-holes. Using the A3 mode resonator based on a LiNbO3 single-crystal thin film and operating in the K band as a prominent example, we demonstrate the advantages of the through-hole design. In the absence of additional processing steps, and while maintaining device performance—including operating frequency, electromechanical coupling coefficient, and quality factor—without introducing extra spurious modes, this approach effectively reduces the ineffective suspension area of the piezoelectric LiNbO3 film, potentially enhancing mechanical and thermal stability. It also standardizes etching distances (and times) across various Lamb wave resonators on a single wafer, facilitating the development of Lamb wave filters. The versatility of the through-hole technique, with relaxed constraints on hole geometry and arrangement, further highlights its significance. Together with the other advantages, these features underscore the transformative potential of through-holes in advancing the practical implementation of Lamb wave resonators and filters. [2024-0155]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 2","pages":"164-173"},"PeriodicalIF":3.1000,"publicationDate":"2025-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"K-Band LiNbO₃ A3 Lamb-Wave Resonators With Through-Holes\",\"authors\":\"Shu-Mao Wu;Hao Yan;Chen-Bei Hao;Zhen-Hui Qin;Si-Yuan Yu;Yan-Feng Chen\",\"doi\":\"10.1109/JMEMS.2025.3540960\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Addressing critical challenges in Lamb wave resonators, this paper presents the first validation of resonators incorporating through-holes. Using the A3 mode resonator based on a LiNbO3 single-crystal thin film and operating in the K band as a prominent example, we demonstrate the advantages of the through-hole design. In the absence of additional processing steps, and while maintaining device performance—including operating frequency, electromechanical coupling coefficient, and quality factor—without introducing extra spurious modes, this approach effectively reduces the ineffective suspension area of the piezoelectric LiNbO3 film, potentially enhancing mechanical and thermal stability. It also standardizes etching distances (and times) across various Lamb wave resonators on a single wafer, facilitating the development of Lamb wave filters. The versatility of the through-hole technique, with relaxed constraints on hole geometry and arrangement, further highlights its significance. Together with the other advantages, these features underscore the transformative potential of through-holes in advancing the practical implementation of Lamb wave resonators and filters. [2024-0155]\",\"PeriodicalId\":16621,\"journal\":{\"name\":\"Journal of Microelectromechanical Systems\",\"volume\":\"34 2\",\"pages\":\"164-173\"},\"PeriodicalIF\":3.1000,\"publicationDate\":\"2025-02-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Microelectromechanical Systems\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10891784/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Microelectromechanical Systems","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10891784/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

针对兰姆波谐振器的关键挑战,本文首次验证了采用通孔的谐振器。以工作在K波段的基于LiNbO3单晶薄膜的A3模式谐振器为例,说明了通孔设计的优点。在没有额外加工步骤的情况下,在不引入额外杂散模式的情况下,在保持器件性能(包括工作频率、机电耦合系数和质量因子)的同时,该方法有效地减少了压电LiNbO3薄膜的无效悬浮面积,潜在地提高了机械和热稳定性。它还标准化了在单个晶圆上跨各种兰姆波谐振器的蚀刻距离(和时间),促进了兰姆波滤波器的开发。通孔技术的通用性,以及对孔的几何形状和布置的宽松限制,进一步凸显了它的重要性。与其他优点一起,这些特点强调了通孔在推进兰姆波谐振器和滤波器的实际实施方面的变革潜力。(2024 - 0155)
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
K-Band LiNbO₃ A3 Lamb-Wave Resonators With Through-Holes
Addressing critical challenges in Lamb wave resonators, this paper presents the first validation of resonators incorporating through-holes. Using the A3 mode resonator based on a LiNbO3 single-crystal thin film and operating in the K band as a prominent example, we demonstrate the advantages of the through-hole design. In the absence of additional processing steps, and while maintaining device performance—including operating frequency, electromechanical coupling coefficient, and quality factor—without introducing extra spurious modes, this approach effectively reduces the ineffective suspension area of the piezoelectric LiNbO3 film, potentially enhancing mechanical and thermal stability. It also standardizes etching distances (and times) across various Lamb wave resonators on a single wafer, facilitating the development of Lamb wave filters. The versatility of the through-hole technique, with relaxed constraints on hole geometry and arrangement, further highlights its significance. Together with the other advantages, these features underscore the transformative potential of through-holes in advancing the practical implementation of Lamb wave resonators and filters. [2024-0155]
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Journal of Microelectromechanical Systems
Journal of Microelectromechanical Systems 工程技术-工程:电子与电气
CiteScore
6.20
自引率
7.40%
发文量
115
审稿时长
7.5 months
期刊介绍: The topics of interest include, but are not limited to: devices ranging in size from microns to millimeters, IC-compatible fabrication techniques, other fabrication techniques, measurement of micro phenomena, theoretical results, new materials and designs, micro actuators, micro robots, micro batteries, bearings, wear, reliability, electrical interconnections, micro telemanipulation, and standards appropriate to MEMS. Application examples and application oriented devices in fluidics, optics, bio-medical engineering, etc., are also of central interest.
期刊最新文献
2025 Index Journal of Microelectromechanical Systems Table of Contents Front Cover Journal of Microelectromechanical Systems Publication Information A High-Density Silicon-Based Microelectrode Array for Chronic In Vivo Neural Recording
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1