拓扑绝缘体Bi2Se3的简易一锅配方及其热电性能

IF 4.3 2区 化学 Q2 CHEMISTRY, MULTIDISCIPLINARY Chemical Communications Pub Date : 2025-04-16 Epub Date: 2025-04-10 DOI:10.1039/d5cc01314c
Anil Kumar B. M. , Rittika Dhar , Shuva Biswas , Satya N. Guin
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引用次数: 0

摘要

具有层状结构和各向异性键合的重p嵌段金属硫族化合物拓扑材料对热电学具有重要意义。用简单的化学路线合成这类材料具有重要意义。在这里,我们提出了一种低温、简便、一锅且经济高效的拓扑绝缘体Bi2Se3纳米片合成方法。该材料表现出优异的电传输和低导热性,导致480 K时的峰值热电性能(ZT)为⁓0.41。此外,在环境条件下合成Bi2S3纳米颗粒表明了该方法的通用性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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A facile one-pot recipe for topological insulator Bi2Se3 with thermoelectric properties†
Topological materials from heavy p-block metal chalcogenides with layered structures and anisotropic bonding are of immense importance for thermoelectrics. The synthesis of such materials with simple chemical routes is of high significance. Here, we present a low-temperature, facile, one-pot, and cost-effective synthesis of topological insulator Bi2Se3 nanosheets. The material demonstrates excellent electrical transport and low thermal conductivity, leading to a peak thermoelectric figure of merit (ZT) of ∼0.41 at 480 K. Additionally, the synthesis of Bi2S3 nanoparticles under ambient conditions suggests the versatility of the method.
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来源期刊
Chemical Communications
Chemical Communications 化学-化学综合
CiteScore
8.60
自引率
4.10%
发文量
2705
审稿时长
1.4 months
期刊介绍: ChemComm (Chemical Communications) is renowned as the fastest publisher of articles providing information on new avenues of research, drawn from all the world''s major areas of chemical research.
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