Daqing Peng , Chuanhao Li , Qiankun Yang , Kechao Wang , Liangbing Ge , Dongguo Zhang , Weike Luo , Zhonghui Li
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Large scale epitaxy of AlGaN/GaN heterojunction films on h-BN/4H-SiC templates
In this study, large scale and high-quality AlGaN/GaN heterojunction films epitaxial grown on two-dimensional h-BN grown through metal–organic chemical vapor deposition were prepared on 6-inch 4H-SiC substrates. The crystal quality of GaN films were improved by adopting H2/NH3 etching at high temperature on h-BN surface before AlN nucleation layer deposition. Furthermore, GaN film grown on h-BN/4H-SiC template under 1200 ℃ pretreatment exhibited lower internal stress, which is one third of that grown on SiC substrate directly. Both h-BN grown on 6-inch 4H-SiC substrate and the subsequent epitaxial AlGaN/GaN heterojunction films have excellent uniformity.
期刊介绍：
The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.
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